Datasheet 2SJ387-S, 2SJ387-L Datasheet (HIT)

2SJ387(L), 2SJ387(S)

Silicon P-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• Low drive current

• 2.5 V Gate drive device can be driven from 3 V Source

• Suitable for Switching regulator, DC - DC converter

Outline

1

2

3

1

2

3

4

4

DPAK-2

1. Gate

2. Drain

3. Source

4. Drain

D

G

S

2SJ387(L), 2SJ387(S)

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V

DSS

–20 V

Gate to source voltage V

GSS

±10 V

Drain current I

D

–10 A

Drain peak current I

D(pulse)

*

1

–40 A

Body to drain diode reverse drain current I

DR

–10 A

Channel dissipation Pch*

2

20 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

2SJ387(L), 2SJ387(S)

3

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown
voltage

V

(BR)DSS

–20 — — V ID = –10 mA, VGS = 0

Gate to source breakdown
voltage

V

(BR)GSS

±10 — — V IG = ±200 µA, VDS = 0

Gate to source leak current I

GSS

——±10 µAV

GS

= ±6.5 V, VDS = 0

Zero gate voltage drain current I

DSS

— — –100 µAV

DS

= –16 V, VGS = 0

Gate to source cutoff voltage V

GS(off)

–0.5 — –1.5 V ID = –1 mA, VDS = –10 V

Static drain to source on state
resistance

R

DS(on)

— 0.05 0.07 Ω ID = –5 A

V

GS

= –4 V*

1

— 0.07 0.1 Ω ID = –5 A

V

GS

= –2.5 V*

1

Forward transfer admittance |yfs| 7 12 — S ID = –5 A

V

DS

= –10 V*

1

Input capacitance Ciss — 1170 — pF VDS = –10 V
Output capacitance Coss — 860 — pF VGS = 0
Reverse transfer capacitance Crss — 310 — pF f = 1 MHz
Turn-on delay time t

d(on)

— 20 — ns ID = –5 A

Rise time t

r

— 325 — ns VGS = –4 V

Turn-off delay time t

d(off)

— 350 — ns RL = 2 Ω

Fall time t

f

— 425 — ns

Body to drain diode forward
voltage

V

DF

— –1.0 — V IF = –10 A, VGS = 0

Body to drain diode reverse
recovery time

t

rr

— 240 — ns IF = –10 A, VGS = 0,

diF/dt = 20 A/µs

Note: 1. Pulse Test

2SJ387(L), 2SJ387(S)

4

40

30

20

10

0

Channel Dissipation Pch (W)

50 100 150 200

Case Temperature Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Maximum Safe Operation Area

–100

–30

–10

–3

–1

–0.3
–0.1

–0.5

–1 –2 –5 –10 –20 –50

Ta = 25 °C

PW = 10 ms (1shot)

Operation in
this area is
limited by R

DS(on)

1 ms

10 µs

100 µs

DC Operation (Tc = 25 °C)

–20

–16

–12

–8

–4

0

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Typical Output Characteristics

–2 –4 –6 –8 –10

V = –1.5 V

GS

Pulse Test

–2.5 V

–2 V

–10 V

–5 V

–4 V

–10

–8

–6

–4

–2

0

Gate to Source Voltage V (V)

GS

Drain Current I (A)

D

Typical Transfer Characteristics

Tc = –25 °C

75 °C

25 °C

V = –10 V
Pulse Test

DS

–1 –2 –3 –4 –5

2SJ387(L), 2SJ387(S)

5

–0.5

–0.4

–0.3

–0.2

–0.1

0

Gate to Source Voltage V (V)

GS

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

V (V)

DS(on)

Drain to Source Saturation Voltage

–2 –4 –6 –8 –10

Pulse Test

D

I = –5 A

–1 A

–2 A

Drain Current I (A)

D

Drain to Source On State Resistance

R ( )Ω

DS(on)

Static Drain to Source on State Resistance

vs. Drain Current

1

0.2

0.5

0.1

0.01

0.02

0.05

–0.5 –1 –2 –5 –10 –20 –50

–4 V

Pulse Test

V = –2.5 V

GS

0.2

0.16

0.12

0.08

0.04

–40 0 40 80 120 160

Case Temperature Tc (°C)

0

R ( )

DS(on)

Static Drain to Source on State Resistance

Ω

Static Drain to Source on State Resistance

vs. Temperature

Pulse Test

–4 V

D

I = –5 A

–1, –2 A

GS

V = –2.5 V

–5 A

–2 A

–1 A

Drain Current I (A)

D

Forward Transfer Admittance |y | (S)

fs

Forward Transfer Admittance vs.

Drain Current

50

20

10

2

5

1

0.5
–0.1

–0.2 –0.5 –1 –2 –5 –10

Tc = –25 °C

75 °C

25 °C

V = –10 V
Pulse Test

DS

2SJ387(L), 2SJ387(S)

6

Reverse Drain Current I (A)

DR

Reverse Recovery Time trr (ns)

Body to Drain Diode Reverse

Recovery Time

–0.1 –0.3 –1 –3 –10 –30 –100

1000

200

500

100

20

50

10

di / dt = 20 A / µs
V = 0, Ta = 25 °C

GS

0 –10 –20 –30 –40 –50

Capacitance C (pF)

Drain to Source Voltage V (V)

DS

Typical Capacitance vs.
Drain to Source Voltage

10000

2000

5000

1000

200

500

100

Ciss

Coss

Crss

V = 0
f = 1 MHz

GS

0

–10

–20

–30

–40

0

Gate Charge Qg (nc)

Drain to Source Voltage V (V)

DS

0

–4

–8

–12

–16

–20–50

Gate to Source Voltage V (V)

GS

Dynamic Input Characteristics

20 40 60

80

100

DS

V

GS

V

V = –5 V

–10 V
–15 V

DD

D

I = –10 A

VDD = –5 V

–10 V
–15 V

Drain Current I (A)

D

Switching Time t (ns)

Switching Characteristics

1000

200

500

100

20

50

10

–0.1 –0.3 –1 –3 –10 –30 –100

d(off)

t

V = –4 V, V = –10 V
PW = 5 µs, duty < 1 %

GS

DD

t

f

r

t

d(on)

t

2SJ387(L), 2SJ387(S)

7

–20

–16

–12

–8

–4

0

Source to Drain Voltage V (V)

SD

Reverse Drain Current I (A)

DR

Reverse Drain Current vs.

Source to Drain Voltage

–0.4 –0.8 –1.2 –1.6 –2.0

Pulse Test

–5 V

–3 V

V = 0, 5 V

GS

3

1

0.3

0.1

0.03

0.01
10 µ

100 µ 1 m 10 m

Pulse Width PW (S)

Normalized Transient Thermal Impedance

100 m 1 10

s (t)

γ

DM

P

PW

T

D =

PW

T

ch – c(t) = s (t) • ch – c
ch – c = 6.25 °C/W, Tc = 25 °C

θ γ θ
θ

D = 1

0.5

0.2

0.01

0.02

0.1

0.05

1 shot Pulse

Tc = 25°C

Normalized Transient Thermal Impedance vs. Pulse Width

2SJ387(L), 2SJ387(S)

8

Vin Monitor

D.U.T.

Vin
–4 V

R

L

V
= –10 V

DD

tr

td(on)

Vin

90%

90%

10%

10%

Vout

td(off)

Vout
Monitor

50Ω

90%

10%

t

f

Switching Time Test Circuit Waveforms

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

DPAK (L)-(2)
—
—

0.42 g

Unit: mm

6.5 ± 0.5 2.3 ± 0.2

0.55 ± 0.1

1.2 ± 0.3

0.55 ± 0.1

5.5 ± 0.5 1.7 ± 0.5

16.2 ± 0.5

4.7 ± 0.5

5.4 ± 0.5

1.15 ± 0.1

2.29 ± 0.5 2.29 ± 0.5

0.8 ± 0.1

0.55 ± 0.1

3.1 ± 0.5

(0.7)

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