Page 1
2SJ363
Silicon P-Channel MOS FET
Application
Low frequency power switching
Features
• Low on-resistance
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
UPAK
G
1
2
3
4
D
1. Gate
2. Drain
3. Source
4. Drain
S
Page 2
2SJ363
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
DR
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10%
2. Value on the alumina ceramic board (12.5×20×0.7 mm)
3. Marking is “PY”.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state R
GSS
DSS
GS(off)
DS(on)
resistance — 0.35 0.45 Ω ID = –1 A, VGS = –10 V*
Forward transfer admittance |yfs| 1.4 2.0 — S ID = –1 A, VDS = –10 V*
Input capacitance Ciss — 2.1 — pF VDS = –10 V, VGS = 0,
Output capacitance Coss — 100 — pF f = 1 MHz
Reverse transfer capacitance Crss — 0.25 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
d(on)
r
d(off)
f
–30 — — V ID = –10 mA, VGS = 0
±20——V I
——±5µAVGS = ±16 V, VDS = 0
——–1µAVDS = –24 V, VGS = 0
–1.0 — –2.0 V ID = –100 µA, VDS = –10 V
— 0.6 0.75 Ω ID = –1 A, VGS = –4 V*
— 1.65 — µsI
—8 —µsR
— 25.9 — µs
— 14.9 — µs
–30 V
±20 V
–2 A
–4 A
–2 A
1W
= ±10 µA, VDS = 0
G
= –1 A, VGS = –10 V,
D
= 30 Ω
L
1
1
1
2
Page 3
2.0
1.5
Maximum Channel Power
Dissipation Curve
D
–10
–3
–1
Maximum Safe Operation Area
100 µs
1 ms
PW =
10 ms
DC Operation
2SJ363
1.0
0.5
(on the aluminam ceramic board)
Channel Power Dissipation Pch (W)
0
50 100 150 200
Ambient Temperature Ta (°C)
Typical Output Characteristics
–4.5 V
–4 V
–2.0
–1.6
D
–3.5 V
–3 V
Pulse Test
–1.2
–2.5 V
–0.8
Drain Current I (A)
–0.4
–2 V
–0.3
–0.1
Operation in
Drain Current I (A)
–0.03
this area is
limited by R
DS(on)
Ta = 25 °C
–0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Drain to Source Voltage V (V)
DS
Typical Transfer Characteristics
–5
–4
Ta = –25 °C
D
–3
–2
Drain Current I (A)
–1
V = –10 V
DS
25 °C
75 °C
V = –1.5 V
GS
0
–2 –4 –6 –8 –10
Drain to Source Voltage V (V)
DS
0 –1–2–3–4–5
Gate to Source Voltage V (V)
GS
3
Page 4
2SJ363
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1.0
–0.8
DS(on)
V (V)
–2 A
–0.6
–0.4
–1 A
I = –0.5 A
–0.2
D
Drain to Source Saturation Voltage
0
–4 –8 –12 –16 –20
Gate to Source Voltage V (V)
Static Drain to Source on State Resistance
vs. Temperature
2.0
Ω
Pulse Test
1.6
DS(on)
R ( )
1.2
I = –2 A
D
0.8
V = –4 V
GS
–1 A
GS
–0.5 A
Static Drain to Source on State Resistance
vs. Drain Current
10
Ω
Pulse Test
3
1
DS(on)
R ( )
V = –4 V
GS
0.3
–10 V
0.1
0.03
Drain to Source On State Resistance
0.01
–0.01 –0.03 –0.1 –0.3 –1 –3
Drain Current I (A)
D
Forward Transfer Admittance vs.
Drain Current
10
fs
5
Tc = –25 °C
2
1
25 °C
75 °C
0.5
–10
0.4
I = –2 A
V = –10 V
GS
0
Static Drain to Source on State Resistance
–40 0 40 80 120 160
D
Case Temperature Tc (°C)
4
–1 A
–0.5 A
V = –10 V
0.2
DS
Pulse Test
Forward Transfer Admittance |y | (S)
0.1
–0.1 –1 –10
–0.2 –0.5 –2 –5
Drain Current I (A)
D
Page 5
Typical Capacitance vs.
Drain to Source Voltage
500
200
100
Coss
50
20
10
5
Ciss
2
Capacitance C (pF)
1
0.5
Crss
0.2
0.1
0
–10 –20 –30 –40 –50
Drain to Source Voltage V (V)
–5
V = 0
GS
f = 1 MHz
DS
Reverse Drain Current vs.
Source to Drain Voltage
100
Switching Characteristics
50
20
t
d(off)
t
f
10
t
r
5
Switching Time t (µs)
2
t
d(on)
1
–0.05
–0.1 –0.2 –0.5 –1 –2 –5
Drain Current I (A)
Pulse Test
2SJ363
V = –10 V
GS
PW = 50 µs, duty < 1 %
D
–4
DR
–3
–2
–1
–10 V
–5 V
V = 0
GS
Reverse Drain Current I (A)
0
–0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V (V)
SD
5
Page 6
Unit: mm
0.53 Max
0.48 Max
4.5 ± 0.1
1.8 Max
1.5
1.5
3.0
1.5 ± 0.1
0.4
φ
1
0.44 Max
(1.5)
(2.5)
2.5 ± 0.1
4.25 Max
0.44 Max
(0.4)
(0.2)
0.8 Min
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
UPAK
—
Conforms
0.050 g
Page 7
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
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of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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5. This product is not designed to be radiation resistant.
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products.
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