Datasheet 2SJ352, 2SJ351 Datasheet (HIT)

2SJ351, 2SJ352

Silicon P-Channel MOS FET

Application

Low frequency power amplifier

Complementary pair with 2SK2220, 2SK2221

Features

• High power gain

• Excellent frequency response

• High speed switching

• Wide area of safe operation

• Enhancement-mode

• Good complementary characteristics

• Equipped with gate protection diodes

ADE-208-143

1st. Edition

Ordering Information

Type No. V

2SJ351 –180 V
2SJ352 –200 V

DSX

2SJ351, 2SJ352

Outline

TO-3P

D

G

S

1

2

3

1. Gate

2. Source
(Flange)

3. Drain

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage 2SJ351 V

DSX

2SJ352 –200
Gate to source voltage V
Drain current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

GSS

D

DR

1

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. Value at TC = 25°C

–180 V

±20 V
–8 A
–8 A
100 W

2

2SJ351, 2SJ352

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source 2SJ351 V

(BR)DSX

breakdown voltage 2SJ352 –200 — —
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source cutoff voltage V
Drain to source saturation

V

GS(off)

DS(sat)

voltage
Forward transfer admittance |yfs| 0.7 1.0 1.4 S ID = –3 A, VDS = –10 V*
Input capacitance Ciss — 800 — pF VGS = 5 V, VDS = –10 V,
Output capacitance Coss — 1000 — pF f = 1 MHz
Reverse transfer capacitance Crss — 18 — pF
Turn-on time t
Turn-off time t

on

off

Note: 1. Pulse test

–180 — — V ID = –10 mA, VGS = 10 V

±20——V I

= ±100 µA, VDS = 0

G

–0.15 — –1.45 V ID = –100 mA, VDS = –10 V
— — –12 V ID = –8 A, VGD = 0*

1

— 320 — ns VDD = –30 V, ID = –4 A
— 120 — ns

1

3

2SJ351, 2SJ352

Power vs. Temperature Derating

150

100

50

Channel Dissipation Pch (W)

0

50 100 150

Case Temperature Tc (°C)

–10

–8

(A)

D

–6

–4

Drain Current I

–2

0

Typical Output Characteristics

–9

–8

= –10 V

GS

–7

V

–6

Pch = 125 W

–5

–4

–3

–10 –20 –30 –40 –50

Drain to Source Voltage V

TC = 25°C

–2

DS

–1

(V)

–20

Maximum Safe Operation Area

IDmax (Continuous)

–10

–5

(A)

D

–2

PW = 100 ms 1 Shot

DC Operation (T

PW = 1 s 1 Shot

C

= 25°C)

PW = 10 ms 1 Shot

Ta = 25°C

–1.0

Drain Current I

–0.5

2SJ351

2SJ352

–0.2

–5 –10 –20 –50 –100 –200 –500

Drain to Source Voltage V

DS

(V)

Typical Output Characteristics

–10

(A)

D

TC = 25°C

–8

–6

VGS = –10 V

–9
–8
–7

–6

–4

–5
–4

Drain Current I

–2

–3
–2

0

0

–2 –4 –6 –8 –10

Drain to Source Voltage V

DS

–1

(V)

4

Forward Transfer Admittance yfs (S)

0.5 m
1 m

10 m

2 k

V

I

T

D

C

DS

10 k 100 k 1 M

= –2 A

= –10 V

= 25°C

Frequency f (Hz)

100 m

1.0

Drain Current ID (A)

0

–2

–4

5

Forward Transfer Admittance vs. Frequency

Gate to Source Voltage V

–2 –4 –6 –8 –10

–6

T

C

= –25°C

–8

V

DS

= –10 V

–10

Typical Transfer Characteristics

10 M 20 M

10

5

–0.1

–0.2 –0.5 –1.0 –2 –5

Drain Current I

D

(A)

–10

Switching Time ton, t

20

50

100

t

off

off

(ns)

200

GS

(V)

500

Switching Time vs. Drain Current

t

on

0

Gate to Source Voltage V

–0.4 –0.8 –1.2 –1.6 –2.0

GS

(V)

Drain Current ID (A)

–0.2

–0.4

75

–0.6

T

C

25

= –25°C

25

75

–0.8

V

DS

= –10 V

–1.0

Typical Transfer Characteristics

2SJ351, 2SJ352

2SJ351, 2SJ352

PW = 50 µs
duty ratio
= 1%

Switching Time Test Circuit

Output

R

L

Input

50 Ω

V

DD

–30V

=

.

.

Input

Output

10%

90%

t

on

Waveforms

t

off

90%

10%

6

1.6

0.5

15.6 ± 0.3

φ3.2 ± 0.2

1.0

2.0

Unit: mm

4.8 ± 0.2

1.5

5.0 ± 0.3

19.9 ± 0.2

14.9 ± 0.2

0.3

1.4 Max

3.6

2.0

0.9

1.0

1.0 ± 0.2

5.45 ± 0.55.45 ± 0.5

18.0 ± 0.5

2.8

0.6 ± 0.2

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-3P
—
Conforms

5.0 g

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