Datasheet 2SJ350 Datasheet (HIT)

2SJ350

Silicon P-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• 4 V gate drive device can be driven from 5 V source

• Suitable for switching regulator, DC-DC converter

ADE-208-138

1st. Edition

Outline

TO-220FM

G

D

S

1

2

3

1. Gate

2. Drain

3. Source

2SJ350

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at T

= 25°C

C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state R

GSS

DSS

GS(off)

DS(on)

resistance — 0.7 0.9 Ω ID = –4 A, VGS = –4 V*
Forward transfer admittance |yfs| 3.0 5.0 — S ID = –4 A, VDS = –10 V*
Input capacitance Ciss — 900 — pF VDS = –10 V, VGS = 0,
Output capacitance Coss — 265 — pF f = 1 MHz
Reverse transfer capacitance Crss — 65 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note: 1. Pulse test

–120 — — V ID = –10 mA, VGS = 0

±20——V I

——±10 µAVGS = ±16 V, VDS = 0
— — –250 µAVDS = –100 V, VGS = 0
–1.0 — –2.0 V ID = –1 mA, VDS = –10 V
— 0.5 0.7 Ω ID = –4 A, VGS = –10 V*

— 11 — ns ID = –4 A, VGS = –10 V,
— 45 — ns RL = 7.5 Ω
— 170 — ns
—80—ns
— –1.2 — V IF = –6 A, VGS = 0

— 240 — ns IF = –6 A, VGS = 0,

–120 V
±20 V
–6 A
–12 A
–6 A
20 W

= ±100 µA, VDS = 0

G

di

/dt = 50 A/µs

F

1

1

1

2

2SJ350

Power vs. Temperature Derating

40

30

20

10

Channel Dissipation Pch (W)

0

50 100 150 200

Case Temperature Tc (°C)

Typical Output Characteristics

–10

–10 V

–6 V

–8

D

–4 V

–6

–3.5 V

–20

Maximum Safe Operation Area

–10

PW = 10 ms (1shot)

–5

D

DC Operation (Tc = 25 °C)

–2

Operation in
this area is

–1

limited by R

–0.5

Drain Current I (A)

DS(on)

–0.2

Ta = 25 °C

–0.1

–2 –5 –10 –20 –50

Drain to Source Voltage V (V)

Typical Transfer Characteristics

–10

Tc = –25 °C

–8

D

–6

25 °C

10 µs

100 µs

1 ms

DS

–100

75 °C

–200

–4

Drain Current I (A)

–2

0

–4 –8 –12 –16 –20

Drain to Source Voltage V (V)

–3 V

V = –2.5 V

GS

Pulse Test

DS

–4

Drain Current I (A)

–2

V = –10 V

DS

Pulse Test

0 –1–2–3–4–5

Gate to Source Voltage V (V)

GS

3

2SJ350

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

–5

Pulse Test

–4

DS(on)

V (V)

–3

I = –5 A

–2

–1

Drain to Source Saturation Voltage

0

–4 –8

–12

Gate to Source Voltage V (V)

Static Drain to Source on State Resistance

vs. Temperature

2.0

Ω

Pulse Test

1.6

DS(on)

R ( )

1.2
–1 A

V = –4 V

0.8

0.4

GS

–10 V

D

–2 A
–1 A

–16 –20

GS

I = –3 A

D

–2 A

–1, –2 A

–3 A

Static Drain to Source on State Resistance

vs. Drain Current

5

Pulse Test

2

DS(on)

R ( )Ω

1

V = –4 V

GS

0.5
–10 V

0.2

Drain to Source On State Resistance

0.1

–0.1 –0.2 –0.5 –1 –2 –5 –10 –20

Drain Current I (A)

D

Forward Transfer Admittance vs.

Drain Current

50

fs

20

V = –10 V

DS

Pulse Test

10

5

2

1

75 °C
25 °C

Tc = –25 °C

0

Static Drain to Source on State Resistance

–40 0 40 80 120 160

Case Temperature Tc (°C)

4

Forward Transfer Admittance |y | (S)

0.5
–0.1 –0.2 –0.5 –1 –2 –5 –10

Drain Current I (A)

D

2SJ350

Body–Drain Diode Reverse

Recovery Time

1000

500

200
100

50

20

Reverse Recovery Time trr (ns)

di / dt = 50 A / µs, V = 0
Ta = 25 °C, Pulse Test

10

–0.1 –0.2

–0.5 –1 –2 –5 –10

Reverse Drain Current I (A)

Dynamic Input Characteristics

0

V = –25 V

DD

–50 V

–40

DS

–80

V

DS

–80 V

V = –25 V

DD

–50 V

–120

–160

V

–80 V

GS

Drain to Source Voltage V (V)

0

20 40 60 80 100

Gate Charge Qg (nc)

GS

DR

I = –6 A

D

Typical Capacitance vs.
Drain to Source Voltage

5000

2000
1000

500

200
100

Capacitance C (pF)

50

V = 0

20
10

GS

f = 1 MHz

0 –10 –20 –30 -40 –50

Drain to Source Voltage V (V)

Switching Characteristics

0

500

V = –10 V, V = –30 V

GS

PW = 2 µs, duty < 1 %

GS

200

–4

100

–8

50

t

–12

20

Switching Time t (ns)

–16

–20–200

10

Gate to Source Voltage V (V)

5

–0.05 –0.1 –0.2 –0.5 –1

Drain Current I (A)

Ciss

Coss

Crss

DS

DD

t

d(off)

f

t

r

t

d(on)

–2 –5 –10
D

5

2SJ350

Reverse Drain Current vs.

Source to Drain Voltage

–10

3

s (t)

1

γ

0.3

D = 1

0.5

–8

Pulse Test

DR

–6

–4

–10 V

V = 0, 5 V

GS

–5 V

–2

Reverse Drain Current I (A)

0

–0.4 –0.8 –1.2 –1.6 –2.0

Source to Drain Voltage V (V)

SD

Normalized Transient Thermal Impedance vs. Pulse Width

Tc = 25°C

0.2

0.1

0.1

0.05

0.03

Normalized Transient Thermal Impedance

0.01

0.02

0.01

1shot pulse

10 µ 100 µ 1 m 10 m 100 m 1 10

6

θ γ θ

ch – c(t) = s (t) • ch – c

θ

ch – c = 6.25 °C/W, Tc = 25 °C

P

DM

Pulse Width PW (S)

PW

T

D =

PW

T

Switching Time Test Circuit Waveforms

2SJ350

Vin Monitor

Vin
10 V

50Ω

D.U.T.

Vout
Monitor

R

L

V

DD

.

=

–30 V

.

Vin

Vout

td(on)

10%

10%

90%

tr

td(off)

90%

90%

10%

t

f

7

10.0 ± 0.3

7.0 ± 0.3

φ

3.2 ± 0.2

0.6

2.8 ± 0.2

2.5 ± 0.2

Unit: mm

1.2 ± 0.2

1.4 ± 0.2

2.0 ± 0.3

0.7 ± 0.1

2.54 ± 0.52.54 ± 0.5

12.0 ± 0.3

5.0 ± 0.3

4.45 ± 0.3

2.5

Hitachi Code
JEDEC
EIAJ
Weight

17.0 ± 0.3

14.0 ± 1.0

0.5 ± 0.1

(reference value)

TO-220FM
—
Conforms

1.8 g

Cautions

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received the latest product standards or specifications before final design, purchase or use.

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contact Hitachi’s sales office before using the product in an application that demands especially high
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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

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