Datasheet 2SJ340 Datasheet (SANYO)

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

P-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6420

2SJ340

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON-resistance.

· Ultrahigh-speed switching.

· 4V drive.

· Enables simplified fabrication, high-density mount­ing, and miniaturization in end products due to the
surface mountable package.

Package Dimensions

unit:mm

2093A

[2SJ340]

10.2

0.9

11.5

unit:mm

2090A

20.9

9.4

1.6

0.8

123

2.55

1.2

2.55

[2SJ340]

4.5

1.3

11.0 8.8

2.7

0.4

1 : Gate
2 : Drain
3 : Source
SANYO : SMP

10.2

0.8

9.93.0

1.5max

123

0.8

2.55

1.2

2.55

2.7

2.552.55

80700TS (KOTO) TA-2165 No.6420–1/4

4.5

8.8

1.35

1 : Gate
2 : Drain
3 : Source
SANYO : SMP-FD

1.3

1.4

0 to 0.3

0.4

2SJ340

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)esluP(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV

egatloVnwodkaerBecruoS-ot-etaGV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egatloVdrawroFedoiDV

Marking:J304

SSD
SSG

D

SG

R

SD

R

SD

WP ≤ elcycytud,sµ01 ≤ %1021–A

PD

D

Tc=25˚C

SSD
SSG

)ffo(VSDI,V01–=

1)no(IDV,A51–=

2)no(IDV,A51–=

)no(d

r

)ffo(d

f

DS

I

SSD)RB(

D

I

SSG)RB(

G

V
V

I

S

V,Am1–=

0=06–V

SG

V,Aµ001±=

0=02±V

SD

V,V06–=

SD
SG

SD
SD
SD

0=001–Aµ

SG

V,V61±=

0=01±Aµ

SD

Am1–=0.1–0.2–V

D

A51–=5152S

D

V01–=0304mΩ

SG

V4–=0455mΩ

SG

zHM1=f,V02–=0083Fp
zHM1=f,V02–=0021Fp
zHM1=f,V02–=003Fp

tiucriCtseTdeificepseeS03sn
tiucriCtseTdeificepseeS051sn
tiucriCtseTdeificepseeS054sn
tiucriCtseTdeificepseeS022sn

V,A03–=

0=0.1–5.1–V

SG

sgnitaR

nimpytxam

06–V
02±V
03–A

56.1W
07W

˚C
˚C

tinU

Switching Time Test Circuit

VDD=--30V

V

0V

--10V

PW=10µs
D.C.≤1%

P.G

in

V

in

G

50Ω

ID=--15A

RL=2Ω

D

S

V

2SJ340

OUT

No.6420–2/4

--5 0

--4 0

–A

D

--3 0

=--5.0V

GS

V

--4.5V

--4.0V

I

D

-- V

DS

--3.5V

2SJ340

--5 0

--4 0

–A

D

--3 0

I

D

-- V

GS

VDS=--10V

25°C

Tc=--25°C

75°C

--2 0

Drain Current, I

--1 0

0

0

--2

Drain-to-Source Voltage, VDS–V

100

7
5

fs|–S

3

y

2

10

7
5

3
2

Forward Transfer Admittance, |

1.0
3

80

70

60

–mΩ

(on)

50

DS

40

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

--8 0

2

1000

7
5

3
2

100

7
5

3

Switching Time, SW Time – ns

2

10

--1 .0

5

77

--1 .0

--3.0V

--2 0

Drain Current, I

--2.5V

--4

y

fs -- I



--6

D

--8

--1 0

IT00699 IT00700

VDS=--10V

°C

Tc=--25

25°C

75°C

2

Drain Current, ID– A Gate-to-Source Voltage, VGS–V

77

3

2557

--10 --100

35

IT00701 IT00702

RDS(on) -- Tc

=- -4V

GS

=- -15A, V

I

D

=- -15A, V

I

D

40 1200

Case Temperature, Tc – ˚C

SW Time -- I

t

(off)

d

t

f

t

r

td(on)

2

3335

Drain Current, ID–A

GS

=- -10V

80--4 0

D

--1 0

160

IT00703 IT00704

VDD=--30V

VGS=--10V

25

IT00705 IT00706

--1 0

0

0

--2--1 --3 --5

Gate-to-Source Voltage, VGS–V

80

70

60

–mΩ

(on)

50

DS

40

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

0

2

10000

7
5

3
2

1000

7
5

3

Ciss, Coss, Crss – pF

2

100

7
5

0

RDS(on) -- V

Ciss, Coss, Crss -- V

--1 0 --1 5 --20 --25 --30--5

Drain-to-Source Voltage, VDS–V

2

IDP=--120A <10µs

--100
7
5

ID=--30A

3

–A

2

D

,I

--1 0

Operation in

7

this area is

5

limited by RDS(on).

3

Drain Current

2

--1 .0

Tc=25°C

7

Single pulse

5

--1 .0

23

A S O

DC operation

Drain-to-Source Voltage, VDS–V

--4

GS

--8--2 --12 --14--6 --10--4

1ms

10ms

100ms

25

--6

Tc=25°C

ID=--15A

DS

f=1MHz

Ciss

Coss

Crss

10µs

100

µs

355777

--100--1 0

No.6420–3/4

2.0

2SJ340

P

P

-- Ta

D

80

D

-- Tc

1.65

–W

1.6

D

1.2

0.8

0.4

No heat sink

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta – ˚C

IT00708

70

–W

D

60

50

40

30

20

10

Allowable Power Dissipation, P

0

20

0

60 80 100 120 140 160

40

Case Temperature, Tc – ˚C

IT00709

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of August, 2000. Specifications and information herein are subject to
change without notice.

PS No.6420–4/4