Datasheet 2SJ247 Datasheet (HIT)

2SJ247

Silicon P-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• 4 V gate drive device can be driven from 5 V source

• Suitable for switching regulator, DC-DC converter

Outline

TO-220AB

G

1

D

S

2

3

1. Gate

2. Drain
(Flange)

3. Source

2SJ247

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at T

= 25°C

C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state R

GSS

DSS

GS(off)

DS(on)

resistance — 0.3 0.45 Ω ID = –4 A, VGS = –4 V*
Forward transfer admittance |yfs| 3.0 5.5 — S ID = –4 A, VDS = –10 V*
Input capacitance Ciss — 880 — pF VDS = –10 V, VGS = 0,
Output capacitance Coss — 325 — pF f = 1 MHz
Reverse transfer capacitance Crss — 80 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time

–100 — — V ID = –10 mA, VGS = 0

±20——V I

——±10 µAVGS = ±16 V, VDS = 0
— — –250 µAVDS = –80 V, VGS = 0
–1.0 — –2.0 V ID = –1 mA, VDS = –10 V
— 0.25 0.3 Ω ID = –4 A, VGS = –10 V*

— 12 — ns ID = –4 A, VGS = –10 V,
— 47 — ns RL = 7.5 Ω
— 150 — ns
—75—ns
— –1.0 — V IF = –8 A, VGS = 0

— 170 — ns IF = –8 A, VGS = 0,

–100 V
±20 V
–8 A
–32 A
–8 A
40 W

= ±100 µA, VDS = 0

G

di

/dt = 50 A/µs

F

1

1

1

2

2SJ247

Power vs. Temperature Derating

60

40

20

Channel Dissipation Pch (W)

0 10050 150

Case Temperature Tc (°C)

Typical Output Characteristics

–20

D

–16

–12

–10 V

–6 V

Pulse Test

–4.5 V

–4 V

–50

Maximum Safe Operation Area

–30

PW = 10 ms (1 Shot)

DC Operation

(Tc = 25°C)

D

–10

–3

–1

Operation in

–0.3

–0.1

this area
is limited
by R (on)

DS

Drain Current I (A)

–0.05

–3 –10 –300 –1000

–1 –30 –100

Drain to Source Voltage V (V)

Typical Transfer Characteristics

–10

Pulse Test

–8

V = –10 V

DS

D

–6

10 s

100 s

1 ms

–25°C

µ

µ

Ta = 25°C

DS

Tc = 75°C

25°C

–8

Drain Current I (A)

–4

–3.5 V

–3 V

–2.5 V

0 –4 –8 –12 –16 –20

Drain to Source Voltage V (V)

DS

–4

Drain Current I (A)

–2

0 –2 –4 –6 –8 –10

Gate to Source Voltage V (V)

GS

3

2SJ247

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

–5

DS

–4

–3

Pulse Test

I = –10 A

D

–2

–5 A

–1

–2 A

0 –2–4–6–8–10

Drain to Source Saturation Voltage V (on) (V)

Gate to Source Voltage V (V)

GS

Static Drain to Source on State

Resistance vs. Temperature

1.0
Pulse Test

Ω

DS

0.8

0.6

0.4

–4 V

–10 A

–5 A

–2 A

0.2

V = –10 V

Static Drain to Source on

State Resestance R (on) ( )

GS

–10 A

–2,–5 A

0

–40 0 40 80 120

160

Case Temperature Tc (°C)

Static Drain to Source on State

Resistance vs. Drain Current

5

Pulse Test

2

Ω

1

V = –4 V

DS

0.5

GS

–10 V

0.2

0.1

Static Drain to Source on State

Resistance R (on) ( )

0.05
–1 –2 –10 –20

–0.5 –5

Drain Current I (A)

D

Forward Transfer Admittance

vs. Drain Current

50

20

fs

10

Pulse Test

V = –10 V

DS

25°C

Tc = –25°C

5

2

75°C

1

0.5

–0.1 –0.2 –0.5 –1 –5 –10–2

Forward Transfer Admittance |y | (s)

Drain Current I (A)

D

–50

4

2SJ247

Body-Drain Diode Reverse

Recovery Time

500

200

rr

100

50

20

di/dt = 50 A/ s
V = 0

GS

µ

10

Reverse Recovery Time t (ns)

0.5
–0.2 –0.5 –1 –2 –5 –10 –20

Reverse Drain Current I (A)

DR

Dynamic Input Characteristics

0

V = –10 V

DD

–25 V

–20

DS

–50 V

–50 V

–40

V

DS

–25 V
V = –10 V

DD

–60

V

GS

–80

I = –8 A

D

Drain to Source Voltage V (V)

–100

0 10 20304050

Gate Charge Qg (nc)

10000

vs. Drain-Source Voltage

3000

1000

300

100

Capacitance C (pF)

30
10

0 –10 –20 –30 –40 –50

Drain to Source Voltage V (V)

Switching Characteristics

GS

500

200

0

–4

100

–8

50

–12

20

–16

Switching Time t (ns)

10

Gate to Source Voltage V (V)

–20

5

–0.1 –0.2 –0.5 –1 –2 –5 –10

Drain Current I (A)

Typical Capacitance

V = 0, f = 1 MHz

GS

Ciss

Coss

Crss

DS

V = –10 V, V = –30 V

GS

Pw = 2 s, duty 1%

µ

t (off)

d

t (on)

d

.

:

DD

≤

t

f

t

r

D

5

2SJ247

Reverse Drain Current vs.

Source to Drain Voltage

–20

Pulse Test

–16

DR

–12

–8

–5 V

–10 V

V = 0 V, 5 V

–4

GS

Reverse Drain Current I (A)

0

0 –0.4 –0.8 –1.2 –1.6 –2.0

Source to Drain Voltage V (V)

SD

(t)

S

3

D = 1

1.0

0.5

0.3

0.2

0.1

0.1

0.05

0.02

0.03

0.01

Normalized Transient Thermal Impedance γ

0.01

1 Shot Pulse

10 µ

Switching Time Test Circuit

Vin Monitor

50 Ω

Vin
–10 V

Normalized Transient Thermal Impedance vs. Pulse Width

100 µ 10 m 100 m 1 101 m

Pulse Width PW (s)

Vin

Vout Monitor

D.U.T

R

L

V

DD

.

=

–30 V

.

Vout

t

d (on)

θch–c (t) = γ
θch–c = 3.13°C/W, T

P

DM

(t) · θch–c

S

PW

T

Waveforms

10%

90%

10%

t

t

r

d (off)

T

C

= 25°C

= 25°C

C

D =

90%

90%

PW

T

10%

t

f

6

11.5 MAX

Unit: mm

2.79 ± 0.218.5 ± 0.57.8 ± 0.5

1.27

2.54 ± 0.5

10.16 ± 0.2

9.5

8.0

φ 3.6

-0.08

+0.2

1.5 MAX

0.76 ± 0.1

2.54 ± 0.5

+0.1

6.4

–0.1

4.44 ± 0.2

1.26 ± 0.15

2.7 MAX

14.0 ± 0.5 15.0 ± 0.3

0.5 ± 0.1

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-220AB
Conforms
Conforms

1.8 g

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