Page 1
2SJ244
Silicon P-Channel MOS FET
Application
High speed power switching
Low voltage operation
Features
• Very Low on-resistance
• High speed switching
• Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.
Outline
UPAK
G
1
2
3
4
D
1. Gate
2. Drain
3. Source
4. Drain
S
Page 2
2SJ244
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Channel dissipation Pch*
DSS
GSS
D
D(pulse)
1
*
2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 100 µs, duty cycle ≤ 10%
2. Value on the alumina ceramic board (12.5×20×0.7 mm)
3. Marking is “JY”.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source cutoff current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state
GSS
DSS
R
GS(off)
DS(on)1
resistance
Static drain to source on state
R
DS(on)2
resistance
Forward transfer admittance |yfs| — 1.8 — S ID = –1 A*1, VDS = –5 V
Input capacitance Ciss — 130 — pF VDS = –5 V, VGS = 0,
Output capacitance Coss — 50 — pF f = 1 MHz
Reverse transfer capacitance Crss — 260 — pF
Turn-on delay time t
Turn-off delay time t
Body to drain diode forward
(on)
(off)
V
DF
voltage
Note: 1. Pulse test
–12 — — V ID = –1 mA, VGS = 0
±7——V I
——±5µAVGS = ±6 V, VDS = 0
——–1µAVDS = –8 V, VGS = 0
–0.4 — –1.4 V ID = –100 µA, VDS = –5 V
— 0.65 0.9 Ω ID = –0.5 A*1, VGS = –2.5 V
— 0.5 — Ω ID = –1 A*1, VGS = –4 V
— 365 — ns ID = –0.2 A*1, Vin = –4 V,
— 1450 — ns RL = 51 Ω
——7VI
–12 V
±7V
±2A
±4A
1W
= ±10 µA, VDS = 0
G
= 4 A*1, VGS = 0
F
2
Page 3
Maximum Channel Power Dissipation Curve
2.0
1.5
-10
-3
-1.0
D
-0.3
Maximum Safe Operation Area
Operation in this Area
is limited by R
DS(on)
DC Operation (Ta=25°C)
PW = 1 ms 1 shot
2SJ244
1.0
0.5
(on the alumina ceramic board)
Channel Power Dissipation Pch ( W )
0
50 100
Ambient Temperature Ta ( °C )
Typical Output Characteristics
-5
-5
- 4.5
-4
D
-3
-2
Drain Current I ( A )
-1
-4
Pulse Test
V = -1.5 V
GS
150 200
-3.5
-3
-2.5
-2
-0.1
Drain Current I ( A )
-0.03
-0.01
-0.1 -0.3 -1.0 -3 -10 -30 -100
Drain to Source Voltage V (V)
DS
**on the alumina
ceramic board
Typical Forward Transfer Characteristics
-5
V = -5 V
DS
Pulse Test
-4
D
-3
-2
Drain Current I ( A )
-1
Ta = -25 °C
+25
+75
-4
0
-2
Drain to Source Voltage V ( V )
-6
DS
-10
-8
0-1
Gate to Source Voltage V ( V )
-2
-3
-4 -5
GS
3
Page 4
2SJ244
Forward Transfer Admittance vs.
Drain Current
20
V = -5 V
DS
Pulse Test
10
5
2
1.0
0.5
Forward Transfer Admittance |Yfs| ( S )
0.2
-0.1 -0.2
Drain Current I (A)
-1.0 -2 -5
-0.5
D
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
-1.0
-0.8
DS(on)
Ta = -25 °C
+25
+75
Pulse Test
-10
Drain to Source on State Resistance vs.
Drain Current
10
Ω
Pulse Test
5
DS(on)
2
-2 V
1.0
0.5
-3 V
V = -4 V
GS
0.2
0.1
-0.2
-0.1
Drain to Source On State Resistance R ( )
Drain Current I (A)
-1.0 -2 -5
-0.5
D
Drain to Source on State Resistance vs.
Case Temperature
1.0
Ω
DS(on)
0.8
Pulse Test
V = -2.5 V
GS
I = -1 A
D
-10
-0.6
-0.4
-0.2
Drain to Source Saturation Voltage V ( V )
0-1
-0.1
-0.5
-0.2
-2
Gate to Source Voltage V ( V )
-3
I = -1 A
D
GS
-4 -5
-0.5 A
0.6
0.4
0.2
0
Drain to Source On State Resistance R ( )
-25
-0.5 A
I = -1 A
D
0
V = -4 V
GS
25
50
100
75
Case Temperature Tc ( °C )
4
Page 5
2SJ244
Reverse Recovery Time vs.
Reverse Drain Current
2000
1000
500
200
100
50
Reverse Recovery Time t rr ( ns )
20
-0.1 -0.2
-1.0 -2 -5
-0.5
Reverse Drain Current I (A)
Dynamic Input Characteristics
DS
-25
-20
-15
I = -4 A
D
Pulse Test
-5 V
V
di/dt = 10 A/µs
PW = 10 µs
DR
V = -10 V
DD
GS
-10
-10
-8
-6
2000
1000
500
200
100
50
Switching Time t ( ns )
20
1000
500
GS
200
100
Switching Time vs. Drain Current
V = - 4 V, V = - 10 V
GS
PW = 2 µs, Duty Cycle = 1 %
td(off)
tf
tr
td(on)
-0.1 -0.2 -0.5 -1.0 -2 -5
Drain Current I (A)
DD
D
Typical Capacitance vs.
Drain to Source Voltage
V = 0
f = 1 MHz
Coss
Ciss
-10
GS
-10
-5
Drain to Source Voltage V ( V )
0
V = -10 V
DD
-5 V
2
V
4
6
Gate Charge Qg ( nc )
DS
-4
-2
50
Typical Capacitance C ( pF )
20
Crss
Gate to Source Voltage V ( V )
0
10
8
10
-0.1 -0.2 -0.5 -1.0 -2 -5 -10
Drain to Source Voltage V (V)
DS
5
Page 6
2SJ244
DR
-4
-3
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
-2
-1
Reverse Drain Current I ( A )
0
-4 V
-2.5 V
V = 0
GS
-0.5 -1.0
Source to Drain Voltage V ( V )
SD
-1.5
-2.0
6
Page 7
Unit: mm
0.53 Max
0.48 Max
4.5 ± 0.1
1.8 Max
1.5
1.5
3.0
1.5 ± 0.1
0.4
φ
1
0.44 Max
(1.5)
(2.5)
2.5 ± 0.1
4.25 Max
0.44 Max
(0.4)
(0.2)
0.8 Min
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
UPAK
—
Conforms
0.050 g
Page 8
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL NorthAmerica : http:semiconductor.hitachi.com/
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
Loading...