Page 1
DATA SHEET
0.3 ± 0.05
1.6 ± 0.1
0.8 ± 0.1
G
0.2
+0.1
–0
0.5 0.5
1.0
1.6 ± 0.1
D
S
0.6
0.75 ± 0.05
0 to 0.1
0.1
+0.1
–0.05
Source (S)
Internal diode
Gate protection
diode
Gate (G)
Drain (D)
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
Marking: A1
MOS FIELD EFFECT TRANSISTOR
P-CHANNEL MOS FET
FOR SWITCHING
2SJ243
The 2SJ243 is a P-channel vertical type MOS FET that is driven
at 2.5 V.
Because this MOS FET can be driven on a low voltage and
because it is not necessary to consider the drive current, the
2SJ243 is ideal for driving the actuator of power-saving systems,
such as VCR cameras and headphone stereo systems.
Moreover, the 2SJ243 is housed in a super small mini-mold
package so that it can help increase the mounting density on the
printed circuit board and lower the mounting cost, contributing to
miniaturization of the application systems.
FEATURES
• Small mounting area: about 60 % of the conventional mini-mold
package (SC-70)
• Can be directly driven by 3-V IC
• Can be automatically mounted
The internal diode in the right figure is a parasitic diode.
The protection diode is to protect the product from damage
due to static electricity. If there is a danger that an extremely
high voltage will be applied across the gate and source in the
actual circuit, a gate protection circuit such as an external
constant-voltage diode is necessary.
PACKAGE DIMENSIONS (in mm)
EQUIVALENT CIRCUIT
Document No. D11215EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS RATING UNIT
Drain to Source Voltage VDSS VGS = 0 –30 V
Gate to Source Voltage VGSS VDS = 0 ±7A
Drain Current (DC) ID(DC) ±100 mA
Drain Current (Pulse) ID(pulse) PW ≤ 10 ms ±200 mA
Total Power Dissipation PT
Channel Temperature Tch 150 ˚C
Operating Temperature Topt –55 to +80 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Duty cycle ≤ 50 %
3.0 cm2 × 0.64 mm, ceramic substrate used
200 mW
1996
Page 2
2SJ243
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Drain Cut-Off Current IDSS VDS = –30 V, VGS = 0 –1.0
Gate Leakage Current IGSS VGS = ±5 V, VDS = 0 ±0.1 ±3.0
Gate Cut-Off Voltage VGS(off) VDS = –3 V, ID = –10 µA –1.6 –1.9 –2.3 V
Forward Transfer Admittance |yfs|VDS = –3 V, ID = 10 mA 20 30 mS
Drain to Source On-State Resistance
Drain to Source On-State Resistance
RDS(on)1 VGS = –2.5 V, ID = –1 mA 55 100 Ω
RDS(on)2 VGS = –4.0 V, ID = –10 mA 20 25 Ω
Input Capacitance Ciss VDS = –5.0 V, VGS = 0, f = 1 MHz 16 pF
Output Capacitance Coss 13 pF
Reverse Transfer Capacitance Crss 2pF
Turn-On Delay Time td(on) VDD = –5V, ID = –10 mA 10 ns
Rise Time tr
Turn-Off Delay Time td(off)
VGS(on) = –5 V, RG = 10 Ω
RL = 500 Ω
40 ns
130 ns
Fall Time tf 80 ns
µ
A
µ
A
SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS (Resistive Load)
V
GS
Gate
L
R
V
DD
Voltage
Waveform
Drain
Current
Waveform
10 %
D
I
t
d(on)
0
10 %
trt
I
D
V
GS(on)
d(off)
90 %
PG.
0
V
GS
τ
τ = 1 s
µ
Duty cycle ≤ 1 %
DUT
R
G
90 %
90 %
t
f
10 %
2
Page 3
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
2SJ243
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
dT - Derating Factor - %
20
20 40 60 80 100 120 140 160
0
T
C
- Case Temperature - ˚C
TRANSFER CHARACTERISTICS
–100
DS
= –3 V
V
Pulsed
–10
150 ˚C
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
240
200
160
120
80
- Total Power Dissipation - mW
T
40
P
0
30 60 90 120 150 180
A
- Ambient Temperature - ˚C
T
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
400
100
25 ˚C
2
× 0.64 mm
3.0 cm
Using ceramic substrate
VDS = –3 V
Pulsed
TA = 75 ˚C
210
–1
–0.1
- Drain Current - mA
D
I
–0.01
–0.001
–1.5 –2.0 –2.5 –3.0 –3.5 –4.0
–1.0
V
GS
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
30
20
ID = –10 mA
10
- Drain to Source On-State Resistance - Ω
DS(on)
R
0
–1 –2 –3 –4 –5 –6 –7 –8 –0.6 –1 –2 –5 –10
GS
V
TA = –25 ˚C
25 ˚C
75 ˚C
- Gate to Source Voltage - V
ID = –0.1 A
- Gate to Source Voltage - V
Pulsed
30
–25 ˚C
10
3
| - Forward Transfer Admittance - mS
fs
y
|
1
–0.5
–1.0 –3.0 –10 –30 –200
D
- Drain Current - mA
I
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
120
100
80
TA = –25 ˚C
60
40
- Drain to Source On-State Resistance - Ω
DS(on)
20
R
–0.3
D
- Drain Current - mA
I
25 ˚C
150 ˚C
GS
= –2.5 V
V
Pulsed
–100
75 ˚C
150 ˚C
3
Page 4
2SJ243
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
130
V
GS
= –4 V
Pulsed
100
75 ˚C
50
25 ˚C
TA = 150 ˚C
- Drain to Source On-State Resistance - Ω
0
DS(on)
R
–0.5 –3 –10 –30 –60
–1
–25 ˚C
ID - Drain Current - mA
SWITCHING CHARACTERISTICS
500
DD
= – 5 V
V
V
GS
= – 5 V
R
in
= 10 Ω
200
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
60
30
V
DS
= –5 V
f = 1 MHz
C
iss
10
C
oss
- Capacitance - pF
rss
3
, C
oss
, C
iss
C
0.5
1
–0.3
–1 –3 –10 –40
DS
- Gate to Source Voltage - V
V
C
rss
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
–200
–100
t
r
–30
V
GS
= 0
Pulsed
100
- Switching Time - ns
f
50
, t
d(off)
, tr, t
20
d(on)
t
10
–6
–10
–30 –50 –100 –300
I
D
- Drain Current - mA
t
t
f
d(on)
t
d(off)
–10
–3
–1
- Diode Forward Current - mA
SD
I
–0.3
–0.1
–0.4
–0.5 –0.6 –0.7 –0.8 –0.9 –1.0 –1.1 –1.2 –1.3
SD
- Source to Drain Voltage - V
V
4
Page 5
2SJ243
REFERENCE
Document Name Document No.
NEC semiconductor device reliability/quality control system TEI-1202
Quality grade on NEC semiconductor devices IEI-1209
Semiconductor device mounting technology manual C10535E
Guide to quality assurance for semiconductor devices MEI-1202
Semiconductor selection guide X10679E
5
Page 6
2SJ243
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
2
Loading...