Datasheet 2SJ222 Datasheet (HIT)

2SJ222

Silicon P-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• 4 V gate drive device
 Can be driven from 5 V source

• Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Outline

TO-220FM

G

D

S

1

2

3

1. Gate

2. Drain

3. Source

2SJ222

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at T

= 25°C

C

–100 V
±20 V
–20 A
–80 A
–20 A
35 W

2

2SJ222

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state R

GSS

DSS

GS(off)

DS(on)

resistance — 0.16 0.22 ID = –10 A, VGS = –4 V*
Forward transfer admittance |yfs| 7.5 12 — S ID = –10 A, VDS = –10 V*
Input capacitance Ciss — 1800 — pF VDS = –10 V, VGS = 0,
Output capacitance Coss — 680 — pF f = 1 MHz
Reverse transfer capacitance Crss — 145 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note: 1. Pulse test

–100 — — V ID = –10 mA, VGS = 0

±20——V I

= ±100 µA, VDS = 0

G

——±10 µAVGS = ±16 V, VDS = 0
— — –250 µAVDS = –80 V, VGS = 0
–1.0 — –2.0 V ID = –1 mA, VDS = –10 V
— 0.12 0.16 Ω ID = –10 A, VGS = –10 V*

— 15 — ns ID = –10 A, VGS = –10 V,
— 115 — ns RL = 3 Ω
— 320 — ns
— 170 — ns
— –1.05 — V IF = –20 A, VGS = 0

— 280 — ns IF = –20 A, VGS = 0,

di

/dt = 50 A/µs

F

1

1

1

See characteristic curves of 2SJ221

3

2SJ222

Power vs. Temperature Derating

60

40

20

Channel Dissipation Pch (W)

0 50 100 150

(°C)

C

Normalized Transient Thermal Impedance vs. Pulse Width

(t)

S

Case Temperature T

3

D = 1

1.0

0.5

–100

10 µs

100 µs

Maximum Safe Operation Area

(A)

D

–30

–10

PW = 10 ms (1 Shot)

1 ms

DC Operation (T

–3

C

–1

= 25°C)

Drain Current I

Operation in this area

–0.3

is limited by R

DS (on)

–0.1

–1 –3 –30 –300

–10 –100 –1000

Drain to Source Voltage V

Ta = 25°C

T

= 25°C

C

DS

(V)

Normalized Transient Thermal Impedance γ

0.3

0.1

0.03

0.01

0.05

0.02

10 µ

0.2

0.1

0.01

1 Shot Pulse

100 µ 10 m 100 m 1 101 m

Pulse Width PW (s)

θch–c (t) = γ
θch–c = 3.57°C/W, T

P

DM

(t) · θch–c

S

PW

T

= 25°C

C

D =

PW

T

4

10.0 ± 0.3

7.0 ± 0.3

φ

3.2 ± 0.2

0.6

2.8 ± 0.2

2.5 ± 0.2

Unit: mm

1.2 ± 0.2

1.4 ± 0.2

2.0 ± 0.3

0.7 ± 0.1

2.54 ± 0.52.54 ± 0.5

12.0 ± 0.3

5.0 ± 0.3

4.45 ± 0.3

2.5

Hitachi Code
JEDEC
EIAJ
Weight

17.0 ± 0.3

14.0 ± 1.0

0.5 ± 0.1

(reference value)

TO-220FM
—
Conforms

1.8 g

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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
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failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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