Datasheet 2SJ221 Datasheet (HIT)

2SJ221

Silicon P-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• 4 V gate drive device
 Can be driven from 5 V source

• Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Outline

TO-220AB

G

1

D

S

2

3

1. Gate

2. Drain
(Flange)

3. Source

2SJ221

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at T

= 25°C

C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state R

GSS

DSS

GS(off)

DS(on)

resistance — 0.16 0.22 ID = –10 A, VGS = –4 V*
Forward transfer admittance |yfs| 7.5 12 — S ID = –10 A, VDS = –10 V*
Input capacitance Ciss — 1800 — pF VDS = –10 V, VGS = 0,
Output capacitance Coss — 680 — pF f = 1 MHz
Reverse transfer capacitance Crss — 145 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note: 1. Pulse test

–100 — — V ID = –10 mA, VGS = 0

±20——V I

——±10 µAVGS = ±16 V, VDS = 0
— — –250 µAVDS = –80 V, VGS = 0
–1.0 — –2.0 V ID = –1 mA, VDS = –10 V
— 0.12 0.16 Ω ID = –10 A, VGS = –10 V*

— 15 — ns ID = –10 A, VGS = –10 V,
— 115 — ns RL = 3 Ω
— 320 — ns
— 170 — ns
— –1.05 — V IF = –20 A, VGS = 0

— 280 — ns IF = –20 A, VGS = 0,

–100 V
±20 V
–20 A
–80 A
–20 A
75 W

= ±100 µA, VDS = 0

G

di

/dt = 50 A/µs

F

1

1

1

2

2SJ221

Power vs. Temperature Derating

120

80

40

Channel Dissipation Pch (W)

0 50 100 150

Case Temperature TC (°C)

Typical Output Characteristics

–50

–40

(A)

D

–30

–8 V–10 V

–6 V

–5 V

Pulse Test

–100

Maximum Safe Operation Area

–30

(A)

D

–10

DC Operation (T

–3

Ta = 25°C

–1

Drain Current I

Operation in this Area

–0.3

is Limited by R

–0.1

–1

–3 –10 –30 –100 –300

Drain to Source Voltage V

Typical Transfer Characteristics

–20

V

–16

(A)

D

–12

DS

Pulse Test

10 µs

100 µs

PW = 10 ms (1 Shot)

1 ms

C

= 25°C)

DS (on)

= –10 V

DS

–1,000

(V)

–20

Drain Current I

–10

Drain to Source Voltage VDS (V)

V

–4 –12 –160

–8 –20

GS

–4 V

= –3 V

–8

Drain Current I

–4

–1 –3 –40

Gate to Source Voltage VGS (V)

75°C

TC = 25°C

–25°C

–2 –5

3

2SJ221

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

(V)

–10

DS (on)

–8

Pulse Test

–6

–4

–20 A

–2

–10 A

ID = –5 A

–4 –12 –160

Drain to Source Saturation Voltage V

–8 –20

Gate to Source Voltage VGS (V)

Static Drain to Source on State

Resistance vs. Case Temperature

1.0

0.8

0.6

(Ω)

DS (on)

0.4

R

0.2

Pulse Test

ID = –20 A

–5, –10 A

VGS = –4 V

VGS = –10 V –5, –10 A

0

Static Drain to Source on State Resistance

0 80 120

–40

40 160

Case Temperature TC (°C)

–20 A

Static Drain to Source on State

Resistance vs. Drain Current
5
3

Pulse Test

1

0.3

(Ω)

0.1

DS (on)

R

V

GS

= –4 V

–10 V

0.03

0.01

0.005

Static Drain to Source on State Resistance

–0.1

–0.3 –1 –3 –10 –30

Drain Current I

D

(A)

Forward Transfer Admittance

vs. Drain Current

100

VDS = –10 V
Pulse Test

30

–25°C

TC = 25°C

10

3

75°C

1

0.3

Forward Transfer Admittance yfs (S)

0.5
–0.3 –1 –3 –10 –30

–0.1

Drain Current I

D

(A)

–100

–100

2SJ221

Body to Drain Diode Reverse

Recovery Time
5,000
3,000

(ns)

rr

1,000

di/dt = 50 A/µs, Ta = 25°C

= 0,

V

GS

300

100

30

Reverse Recovery Time t

10

5
–0.1

–0.3 –1 –3 –10 –30

Reverse Drain Current I

Dynamic Input Characteristics

(V)

–20

DS

0

VDD = –10 V
–25 V
–50 V

–40

V

DS

–60

V

–80

Drain to Source Voltage V

–100

20 60 800

40 100

Gate Charge Qg (nc)

VDD = –50 V
–25 V
–10 V

GS

(A)

DR

ID = –20 A

10,000

Capacitance C (pF)

–100

0

5,000
3,000

(V)

–4

GS

1,000

–8

–12

–16

Switching Time t (ns)

Gate to Source Voltage V

–20

1,000

100

10

300

100

30

10

Typical Capacitance vs.
Drain to Source Voltage

Ciss

Coss

Crss

0

–20 –50

–10 –30 –40

Drain to Source Voltage V

Switching Characteristics

V

= 10 V, V

GS

PW = 2 µs, duty 1%

t

f

t

r

5
–0.1

–0.3 –1 –3 –10 –30

Drain Current I

t

d (off)

t

d (on)

D

DD

(A)

VGS = 0
f = 1 MHz

(V)

DS

.

–30 V

=

.

<

=

–100

2SJ221

Reverse Drain Current vs.

Source to Drain Voltage

–50

Pulse Test

–40

(A)

DR

–30

–20

–10 V

–10

–5 V

Reverse Drain Current I

–0.8 –2.0

–0.4 –1.2 –1.6

0

Source to Drain Voltage V

V

GS

= 0, 5 V

SD

(V)

(t)

S

Normalized Transient Thermal Impedance γ

1.0

0.3

0.1

0.03

0.01

3

0.01

10 µ

D = 1

0.5

0.2

0.1

0.05

0.02

1 Shot Pulse

100 µ 10 m 100 m 1 101 m

Switching Time Test Circuit

Vin Monitor

50 Ω

Vin
–10 V

Normalized Transient Thermal Impedance vs. Pulse Width

θch–c (t) = γ
θch–c = 1.67°C/W, T

P

DM

Pulse Width PW (s)

Waveforms

Vin

Vout Monitor

10%

D.U.T

R

L

V

DD

.

=

–30 V

.

Vout
t

d (on)

90%

10%

td

t

(off)

r

(t) · θch–c

S

PW

T

90%

90%

TC = 25°C

C

10%

t

f

= 25°C

PW

D =

T

11.5 MAX

Unit: mm

2.79 ± 0.218.5 ± 0.57.8 ± 0.5

1.27

2.54 ± 0.5

10.16 ± 0.2

9.5

8.0

φ 3.6

-0.08

1.5 MAX

0.76 ± 0.1

2.54 ± 0.5

+0.2

6.4

–0.1

+0.1

4.44 ± 0.2

1.26 ± 0.15

2.7 MAX

14.0 ± 0.5 15.0 ± 0.3

0.5 ± 0.1

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-220AB
Conforms
Conforms

1.8 g

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