Datasheet 2SJ217 Datasheet (HIT)

2SJ217

Silicon P-Channel MOS FET

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• 4 V gate drive device
 Can be driven from 5 V source

• Suitable for motor drive, DC-DC converter, power switch and solenoid drive

November 1996

Outline

TO-3P

G

D

1

2

3

1. Gate

2. Drain

S

(Flange)

3. Source

2SJ217

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at T

= 25°C

C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state R

GSS

DSS

GS(off)

DS(on)

resistance — 0.045 0.06 ID = –20 A, VGS = –4 V*
Forward transfer admittance |yfs|1625—S I
Input capacitance Ciss — 3800 — pF VDS = –10 V, VGS = 0,
Output capacitance Coss — 2000 — pF f = 1 MHz
Reverse transfer capacitance Crss — 490 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body to drain diode forward

V

d(on)

r

d(off)

f

DF

voltage
Body to drain diode reverse

t

rr

recovery time
Note 1. Pulse test

–60 — — V ID = –10 mA, VGS = 0

±20——V I

——±10 µAVGS = ±16 V, VDS = 0
— — –250 µAVDS = –50 V, VGS = 0
–1.0 — –2.0 V ID = –1 mA, VDS = –10 V
— 0.033 0.042 Ω ID = –20 A, VGS = –10 V*

— 30 — ns ID = –20 A, VGS = –10 V,
— 235 — ns RL = 1.5 Ω
— 670 — ns
— 450 — ns
— –1.35 — V IF = –45 A, VGS = 0

— 300 — ns IF = –45 A, VGS = 0,

–60 V
±20 V
–45 A
–180 A
–45 A
150 W

= ±100 µA, VDS = 0

G

= –20 A, VDS = –10 V*

D

di

/dt = 50 A/µs

F

1

1

1

2

2SJ217

Power vs. Temperature Derating

150

100

50

Channel Dissipation Pch (W)

0 50 100 150

Case Temperature T

(°C)

C

Typical Output Characteristics

–100

–80

(A)

D

–60

–10 V

–6 V

–5 V

Pulse Test

–4 V

–200

Maximum Safe Operation Area

–100

–50

(A)

D

Operation in this area

DS (on)

is limited by R

PW = 10 ms (1 shot)

1 ms

DC Operation (T

–20
–10

Drain Current I

–5

C

= 25°C)

Ta = 25°C

–2

–2 –5 –10 –20 –50 –100

–1

Drain to Source Voltage V

Typical Forward Transfer Characteristics

–50

–40

(A)

D

–30

V
Pulse Test

DS

TC = –25°C

= –10 V

10 µs

100 µs

DS

(V)

25°C

75°C

–40

Drain Current I

–20

–4 –12 –160

Drain to Source Voltage V

–3 V

VGS = –2 V

–8 –20

(V)

DS

–20

Drain Current I

–10

–1 –3 –40

Gate to Source Voltage V

–2 –5

(V)

GS

3

Static Drain to Source on State Resistance

(Ω)

R

V

GS

= –10 V

DS (on)

0.04

0.06

V

GS

= –4 V

0.02

0

–40

Case Temperature T

0 80 120

40 160

0.08

Pulse Test

Drain to Source Saturation Voltage V

0.1
Gate to Source Voltage V

–2 –6 –80

Static Drain to Source on State

Resistance vs. Temperature

–4 –10

–0.5

–1.0

–1.5

–2.0

(V)

DS (on)

–2.5

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

2SJ217

–10 A

C

(°C)

–10, –20 A

I

D

= –50 A

Forward Transfer Admittance yfs (nS)

20

10

5

2

50

–1 –5 –20–0.5

Drain Current I

–2 –50

75°C

–10

D

(A)

I

D

= –20 A

T

C

= 25°C

–25°C

200

100

V

Pulse Test

DS

= –10 V

GS

(V)

Static Drain to Source on State Resistance

0.005

–2 –10 –20

Forward Transfer Admittance

Pulse Test

–5 –100

vs. Drain Current

Drain Current I

D

–50

(A)

–200

I

D

= –10 A

0.01

–20 A

0.02

R

DS (on)

(Ω)

0.05

V

GS

= –4 V

–10 V

0.1

–50 A

0.2

Pulse Test

0.5

Static Drain to Source on State

Resistance vs. Drain Current

Drain to Source Voltage VDS (V)

–100

–80

–60

–40

–20

Reverse Recovery Time trr (ns)

100

0

50

200

500

1,000

2,000

5,000

I

D

= –45 A

40 120 1600

Gate Charge Qg (nc)

80 200

–16

–20

Gate to Source Voltage VGS (V)

Switching Time t (ns)

20
V

GS

= –10 V, PW = 2 µs

50

10

–0.5

V

DD

–1 –5–2 –10 –20

–30 V, duty 1%

=

.

.

Drain Current I

t

d (on)

<

=

D

(A)

–50

–50 V

–12

V

DD

= –10 V

–25 V

100

t

r

–8

GS

DS

V

200

Ta = 25°C

Pulse Test

V

Dynamic Input Characteristics

V

DD

–1 –5 –20–0.5

Reverse Drain Current I

–2 –50

di/dt = 50 A/µs, V

Body to Drain Diode Reverse

Recovery Time

= –10 V

–25 V

–50 V

GS

–10

DR

= 0

(A)

–4

500

0

1,000

100

Capacitance C (pF)

200

500

1,000

2,000

5,000

10,000

0

V

–10 –30 –40

–20 –50

f = 1 MHz

GS

= 0

Drain to Source Voltage

Typical Capacitance vs.

Drain to Source Voltage V

Switching Characteristics

t

f

Ciss

t

d (off)

DS

(V)

Crss

Coss

2SJ217

Normalized Transient Thermal Impedance γS (t)

10 µ

0.03

0.01

0.01

1 Shot Pulse

0.02

0.05

0.1

0.1

0.3

0.2

0.5

1

D = 1

100 µ 10 m 100 m 1 101 m

2SJ217

3

Normalized Transient Thermal Impedance vs. Pulse Width

Pulse Width PW (s)

DM

T

PW

D =

PW

T

θch–c = 0.83°C/W, T

θch–c (t) = γ

P

S

(t) · θch–c

C

= 25°C

T

C

= 25°C

Reverse Drain Current IDR (A)

–20

–40

0

Source to Drain Voltage V

–0.5 –1.5 –2.0

–5 V

–1.0 –2.5

V

GS

= 0,5 V

SD

(V)

–60

–10 V

–80

Pulse Test

–100

Reverse Drain Current vs.

Source to Drain Voltage

2SJ217

Switching Time Test Circuit

Vin Monitor

Vin
–10 V

50 Ω

D.U.T.

Vout Monitor

R

L

V

= 30 V

DD

Vin

Vout

t

d (on)

Switching Time Test Waveforms

10%

90%

90%

10%

t

r

td

(off)

90%

10%

t

f

7

1.6

0.5

15.6 ± 0.3

φ3.2 ± 0.2

1.0

2.0

Unit: mm

4.8 ± 0.2

1.5

5.0 ± 0.3

19.9 ± 0.2

14.9 ± 0.2

0.3

1.4 Max

3.6

2.0

0.9

1.0

1.0 ± 0.2

5.45 ± 0.55.45 ± 0.5

18.0 ± 0.5

2.8

0.6 ± 0.2

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-3P
—
Conforms

5.0 g

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