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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ200
2SJ200
High Power Amplifier Application
l High breakdown voltage : V
l High forward transfer admittance : |Y
l Complementary to 2SK1529
Maximum Ratings
Characteristics Symbol Rating Unit
Drain−source voltage V
Gate−source voltage V
Drain current (Note 1) ID −10 A
Drain power dissipation (Tc = 25°C) PD 120 W
Channel temperature Tch 150 °C
Storage temperature range T
(Ta = 25°C)
= −180 V
DSS
| = 4.0 S (typ.)
fs
−180 V
DSS
±20 V
GSS
−55~150 °C
stg
Marking
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC ―
JEITA ―
TOSHIBA 2-16C1B
Weight: 4.6 g (typ.)
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain cut−off current I
Gate leakage current I
Drain−source breakdown voltage V
Gate−source cut−off voltage
(Note 2)
Drain−source saturation voltage V
Forward transfer admittance |Yfs| VDS = −10 V, ID = −3 A ― 4.0 ― S
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
(Ta = 25°C)
(BR) DSSID
V
GS (OFF) VDS
DS (ON)
VDS = −180 V, VGS = 0 ― ― −1.0 mA
DSS
VDS = 0, VGS = ±20 V ― ― ±0.5 µA
GSS
= −10 mA, VGS = 0 −180 ― ― V
= −10 V, ID = −0.1 A −0.8 ― −2.8 V
ID = −6 A, VGS = −10 V ― −1.5 −5.0 V
VDS = −30 V, VGS = 0, f = 1 MHz ― 1300 ―
iss
VDS = −30 V, VGS = 0, f = 1 MHz ― 350 ―
oss
VDS = −30 V, VGS = 0, f = 1 MHz ― 200 ―
rss
Note 1: Please use devices on condition that the channel temperature is below 150°C.
pF
Note 2: V
GS (OFF)
Classification O: −0.8~−1.6, Y: −1.4~−2.8
This transistor is an electrostatic sensitive device. Please handle with caution.
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2SJ200
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2SJ200
Switching Time Test Circuit Waveforms
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2SJ200
A
RESTRICTIONS ON PRODUCT USE
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
000707EA
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This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
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