
2SJ160, 2SJ161, 2SJ162
Silicon P-Channel MOS FET
Application
Low frequency power amplifier
Complementary pair with 2SK1056, 2SK1057 and 2SK1058
Features
• Good frequency characteristic
• High speed switching
• Wide area of safe operation
• Enhancement-mode
• Good complementary characteristics
• Equipped with gate protection diodes
• Suitable for audio power amplifier

2SJ160, 2SJ161, 2SJ162
Outline
TO-3P
D
G
S
1
2
3
1. Gate
2. Source
(Flange)
3. Drain
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage 2SJ160 V
DSX
2SJ161 –140
2SJ162 –160
Gate to source voltage V
Drain current I
Body to drain diode reverse drain current I
Channel dissipation Pch*
GSS
D
DR
1
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C
–120 V
±15 V
–7 A
–7 A
100 W
2

2SJ160, 2SJ161, 2SJ162
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source 2SJ160 V
(BR)DSX
breakdown voltage 2SJ161 –140 — — V
2SJ162 –160 — — V
Gate to source breakdown
V
(BR)GSS
voltage
Gate to source cutoff voltage V
Drain to source saturation
V
GS(off)
DS(sat)
voltage
Forward transfer admittance |yfs| 0.7 1.0 1.4 S ID = –3 A, VDS = –10 V*
Input capacitance Ciss — 900 — pF VGS = 5 V, VDS = –10V,
Output capacitance Coss — 400 — pF f = 1 MHz
Reverse transfer capacitance Crss — 40 — pF
Turn-on time t
Turn-off time t
on
off
Note: 1. Pulse test
–120 — — V ID = –10 mA , VGS = 10 V
±15——V I
= ±100 µA, VDS = 0
G
–0.15 — –1.45 V ID = –100 mA, VDS = –10 V
— — –12 V ID = –7 A, VGD = 0*
1
— 230 — ns VDD = –20 V, ID = –4 A
— 110 — ns
1
3

2SJ160, 2SJ161, 2SJ162
Power vs. Temperature Derating
150
100
50
Channel Dissipation Pch (W)
0 50 100 150
Case Temperature T
(°C)
C
Typical Output Characteristics
–10
(A)
D
–8
–6
–9
–8
–7
–6
TC = 25°C
–5
–4
Drain Current I
–2
–4
Pch = 100 W
–3
–2
–1 V
0
–10 –30 –40
–20 –50
Drain to Source Voltage V
DS
V
GS
(V)
= 0
–20
Maximum Safe Operation Area
–10
ID max (Continuous)
PW = 100 ms (1 Shot)
DC Operation (T
(–14.3 V,
–5
–7 A)
(A)
D
–2
C
= 25°C)
–1.0
Drain Current I
–0.5
–0.2
–5 –10 –50 –200
(–120 V, –0.83 A)
–20 –100 –500
Drain to Source Voltage V
Typical Transfer Characteristics
–1.0
V
= –10 V
DS
–0.8
(A)
D
–0.6
–0.4
Drain Current I
–0.2
–0.4 –1.2 –1.60
–0.8
Gate to Source Voltage V
Ta = 25°C
PW = 10 ms (1 Shot)
(–140 V, –0.71 A)
(–160 V, –0.63 A)
2SJ160
2SJ161
2SJ162
(V)
DS
25
= –25°C
75
C
T
–2.0
(V)
GS
4

Input Capacitance Ciss (pF)
100
200
0
Gate to Source Voltage V
268
410
500
1,000
Gate to Source Voltage
Input Capacitance vs.
Drain Current I
Drain to Source Saturation Voltage V
–0.1
–0.1 –5
–0.2
–0.5
–1.0
–2
–0.2 –1.0 –2
–0.5 –10
DS (sat)
–5
V
GD
= 0
(V)
–10
Drain to Source Saturation Voltage
vs. Drain Current
V
f = 1 MHz
GS
(V)
DS
= –10 V
Forward Transfer Admittance yfs (S)
0.003
0.01
0.03
0.1
0.3
10 k
T
V
I
D
C
DS
30 k
= –2 A
= 25°C
= –10 V
Frequency f (Hz)
100 k 300 k 1 M 3 M 10 M
1.0
D
(A)
3.0
Gate to Source Voltage V
Forward Transfer Admittance
vs. Frequency
–2 –6 –8
–4 –10
GS
(V)
Drain to Source Voltage VDS (V)
–4
–2
0
I
D
= –1 A
–2
–6
–5
T
C
= –25°C
–8
25
75
–10
Drain to Source Voltage vs.
Gate to Source Voltage
2SJ160, 2SJ161, 2SJ162

2SJ160, 2SJ161, 2SJ162
500
Switching Time vs. Drain Current
200
(ns)
off
, t
100
on
50
20
Switching Time t
10
5
–0.2 –1.0 –2
–0.1
Switching Time Test Circuit
Output
R
L
Input
t
on
t
off
D
–5
(A)
–0.5 –10
Drain Current I
10%
Input
Waveforms
90%
PW = 50 µs
duty ratio
= 1%
50 Ω
–20 V
Output
t
on
90%
t
off
10%
6

1.6
0.5
15.6 ± 0.3
φ3.2 ± 0.2
1.0
2.0
Unit: mm
4.8 ± 0.2
1.5
5.0 ± 0.3
19.9 ± 0.2
14.9 ± 0.2
0.3
1.4 Max
3.6
2.0
0.9
1.0
1.0 ± 0.2
5.45 ± 0.55.45 ± 0.5
18.0 ± 0.5
2.8
0.6 ± 0.2
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
TO-3P
—
Conforms
5.0 g

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