Datasheet 2SH31 Datasheet (HIT)

Features

• High speed switching

• Low on-voltage

Outline

2SH31

Silicon N Channel IGBT

High Speed Power Switching

ADE-208-793(Z)

1st. Edition

May 1999

TO–3P

C

G

E

1

2

3

1. Gate

2. Collector (Flange)

3. Emitter

2SH31

C

G

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to Emitter voltage V
Gate to Emitter voltage V
Collector current I

CES

GES

C

Collector peak current ic(peak) 150 A
Collector dissipation P

C

Note1

Channel temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C

Note: 1. Value at Tc = 25°C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Zero gate voltage collector

I

CES

current
Gate to emitter leak current I
Gate to emitter cutoff voltage V
Collector to emitter saturation

V

GES

GE(off)

CE(sat)

voltage
Input capacitance Cies  4100  pF V

Switching time t

r

t

on

t

f

t

off

100 µAV

±1 µAV

6.0  8.0 V IC = 75mA, VCE = 10V
 2.1 2.6 V IC = 75A, VGE = 15V

 400  ns IC = 75A
 600  ns RL = 4 Ω
 300 600 ns VGS = ±15V
 800 1600 ns Rg = 50 Ω

600 V
±20 V
75 A

150 W

CE

GE

E

f = 1MHz

= 600V, VGE = 0

= ± 20 V, VCE = 0

= 10V, V

E

= 0

2

Main Characteristics

2SH31

Power vs. Temperature Derating

200

150

100

50

Channel Dissipation Pch (W)

0

200
100

50

C

50 100 150 200

Case Temperature Tc (°C)

Reverse Bias SOA

1000

300
100

0.3

0.1

Collector Current I (A)

0.03

0.01

100

Maximum Safe Operation Area

30
10

PW = 10 ms (1shot)

3
1

Ta = 25 °C

0.1 0.3 1 3 10 30 100
Collector to Emitter Voltage V (V)

Typical Output Characteristics

15 V

80

DC Operation (Tc = 25°C)

11 V

100 µs

1 ms

3001000

CE

Pulse Test

10 V

20
10

5

Collector Current I (A)

2

Tc = 25 °C

1

0

200 400 600 800

Collector to Emitter Voltage V (V)

CE

60

40

20

Collector Current I (A)

0

246810

Collector to Emitter Voltage V (V)

V = 8 V

9 V

GE

CE

3

2SH31

Collector Current I (A)

Typical Transfer Characteristics

100

V = 10 V

CE

Pulse Test

80

C

60

40

Tc = 75°C

20

0

4 8 12 16 20

Gate to Emitter Voltage V (V)

–25°C

25°C

GE

Collector to Emitter Saturation Voltage

vs. Gate to Emitter Voltage

5

Pulse Test

4

CE(sat)

V (V)

3

I = 75 A

C

2

50 A

1

Collector to Emitter Saturation Voltage

0

48

12

Gate to Emitter Voltage V (V)

25 A

16 20

GE

Collecot to Emitter Saturation Voltage

vs. Collector Current

10

5

CE(sat)

V (V)

2

–25°C

25°C

1

Tc = 75°C

0.5

0.2

V = 15 V

GE

Collector to Emitter Saturation Voltage

Pulse Test

1 5 20 10021050

Collector Current I (A)

C

Typical Capacitance vs.

Collecotor to Emitter Voltage

100000

30000
10000

3000
1000

Capacitance C (pF)

300
100

50

01020304050
Collector to Emitter Voltage V (V)

V = 0

GE

f = 1 MHz

Cies

Coes

Cres

CE

4

2SH31

Dynamic Input Characteristics

1000

V = 200 V

CE

800

CC

300 V
400 V

600

400

200

Collector to Emitter Voltage V (V)

V

CE

V = 400 V

CC

300 V
200 V

0

80 160 240 320 400

I = 75 A

C

Gate Charge Qg (nc)

Switching Characteristics

10000

3000

I = 75 A, R = 4

C

V = ±15 V

GE

L

t

d(off)

Ω

1000

300

Switching Characteristics

GE

1000

500

200

t

d(off)

t

f

t

d(on)

20

V

GE

16

12

100

8

50

t

r

Switching Time t (ns)

4

0

20

Gate to Emitter Voltage V (V)

10

12 5

V = 300V, V = ±15 V

CC

Rg = 50 , Ta = 25°C

Ω

10

Collector Current I (A)

GE

20 50 100

C

Switching Characteristics

1000

t

t

500

200

t

f

100

d(off)

t

d(on)

f

t

r

100

t

r

Switching Time t (ns)

30

t

d(on)

10

1 3 10 30 100 300 1000

Gate Resistance Rg ( )

50

Switching Time t (ns)

20

10

I = 75 A, R = 4

C

V = ±15 V, Rg = 50

GE

Ω

L

Ω

25 50 75 100 125

Ω

Case Temperature Tc (°C)

5

2SH31

Normalized Transient Thermal Impedance vs. Pulse Width

3

s (t)

1

γ

D = 1

0.5

0.3

0.2

θ γ θ

0.1

0.1

ch – c(t) = s (t) • ch – c

θ

ch – c = 0.83 °C/W, Tc = 25 °C

0.05

P

0.03

Normalized Transient Thermal Impedance

0.02

0.01

DM

1shot pulse

0.01
10 µ

100 µ 1 m 10 m

100 m 1 10

Pulse Width PW (S)

Switching Time Test Circuit Waveform

10%

0

Vin

Ic Monitor

V

CE

90%

PW

T

Tc = 25°C

PW

D =

T

90%

Vin Monitor

Rg

V

CE

Monitor

D.U.T.

R

L

V

CC

td(on)

ton

10%

tr

90%

Vin ± 15 V

Ic

td(off)

10%

tf

toff

6

Package Dimensions

16.0 max

0.5 typ

φ

3.2 ± 0.2

1.0 typ

2SH31

Unit: mm

5.0 max

1.5 typ

5.0 ± 0.3

1.6 typ

1.4 max

3.6 typ

5.45 ± 0.2 5.45 ± 0.2

2.0 typ

2.0 typ

1.0 ± 0.2

0.9 typ

1.0 typ

14.9 ± 0.2

20.1 max18.0 ± 0.5

0.3 typ

2.8 typ

0.6 ± 0.2

Hitachi Code

EIAJ

JEDEC

TO–3P
SC–65

—

7

2SH31

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8

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