Datasheet 2SH17 Datasheet (HIT)

Application

High speed power switching

Features

• High speed switching

• Low on saturation voltage

Table 1 Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

———————————————————————————————————————————

Collector to emitter voltage V

CES

600 V

———————————————————————————————————————————

Gate to emitter voltage V

GES

±20 V

———————————————————————————————————————————

Collector current I

C

12 A

———————————————————————————————————————————

Collector peak current ic(peak) 20 A

———————————————————————————————————————————

Collectorl dissipation PC*50W

———————————————————————————————————————————

Channel temperature T

j

150 °C

———————————————————————————————————————————

Storage temperature Tstg –55 to +150 °C

———————————————————————————————————————————

* Value at Tc = 25°C

1

2

3

TO–220AB

1

2

3

1. Gate

2. Collector

3. Emitter

1

2SH17

Silicon N-Channel IGBT

1st. Edition

Feb. 1995

ADE–208–290 (Z)

Table 2 Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

———————————————————————————————————————————

Collector to emitter breakdown V

(BR)CES

600 — — V IC= 100 µA, VGE= 0

voltage

———————————————————————————————————————————

Zero gate voltage collector I

CES

— — 0.5 mA VCE= 600 V, VGE= 0

current

———————————————————————————————————————————

Gate to emitter leak current I

GES

——±1µAVGE= ±20 V, VCE= 0

———————————————————————————————————————————

Gate to emitter cutoff current V

GE(off)

3.0 — 6.0 V IC= 1 mA, VCE= 10 V

———————————————————————————————————————————

Collector to emitter saturation V

CE(sat)

1 — 1.5 — V IC= 5 A, VGE= 15 V

voltage

———————————————————————————————————————————

Collector to emitter saturation V

CE(sat)

2 — 2.0 2.6 V IC= 10 A, VGE= 15 V

voltage

———————————————————————————————————————————

Input capacitance Cies — 1000 — pF VCE= 10 V, VGE= 0,

f = 1 MHz

———————————————————————————————————————————

Switching time t

r

— 75 — ns IC= 10 A,

————————————————

t

on

— 150 — RL= 30 Ω,

————————————————

t

f

— 2000 — VGE= ±15 V

————————————————

t

off

— 2300 — Rg = 50 Ω

———————————————————————————————————————————

2

2SH17

3

2SH17

Power vs. Tempereture Derating

80

60

40

20

Collector Dissipation Pc (W)

0

50

100 150

Case Temperature Tc (°C)

Reverse Bias SOA

100

10

C

1

200

100

Maximum Safe Operation Area

10

C

DC Operation

(Tc = 25 °C)

PW = 10 ms(1 shot)

100 µs

1 ms

1

0.1

Collector Current I (A)

Ta = 25 °C

0.01
1 10 100 1000

Collector to Emitter Voltage V (V)

Typical Output Characteristics

20

V =

GE

12 V

15 V

16

C

12

8

CE

10 V

8 V

0.1

Collector Current I (A)

0.01

Tc = 25 °C

0 200 400 600 800
Collector to Emitter Voltage V (V)

CE

4

Collector Current I (A)

Ta = 25 °C

6 V

0426810

Pulse Test

Collector to Emitter Voltage V (V)

CE

4

2SH17

20

16

C

12

Typical Transfer Characteristics

Tc = –25 °C

25 °C
75 °C

Collector to Emitter Saturation Voltage

vs. Gate to Emitter Voltage

10

I = 10 A

8

5 A

CE(sat)

V (V)

3 A

6

C

8

4

Collector Current I (A)

Pulse Test
V = 10 V

CE

048121620

Gate to Emitter Voltage V (V)

GE

Collector to Emitter Saturation Voltage

vs. Collector Current

50

Pulse Test
V = 15 V

GE

20

CE(sat)

10

V (V)

5

Tc =75 °C

25 °C

2

1

–25 °C

4

2

Pulse Test

Collector to Emitter Saturation Voltage

048121620

Gate to Emitter Voltage V (V)

GE

Typical Capacitance vs.

Collector to Emitter Voltage

10000

V = 0

GE

f = 1 MHz

1000

100

Cies

Coes

Capacitance C (pF)

Cres

Collector to Emitter Saturation Voltage

0.5

2 5 10 20

1
Collector Current I (A)

10

0 1020304050

C

Collector to Emitter Voltage V (V)

CE

1000

100

200

500

50

20

5 10 50 100 500

C

Ω

L
GE

I = 10 A
R = 30
V = ±15 V

tf

td(on)

tr

2000

td(off)

Gate Resistance Rg ( )

Ω

Switching Time t (ns)

Switching Characteristics

2000

1000

500

200

100

50

5000

–25 0 25 50 75 100 125

C

L
GE

Ω

Ω

I = 10 A
R = 30
V = ±15 V
Rg = 50

td(on)

tr

tf

td(off)

Case Temperature Tc (°C)

Switching Time t (ns)

Switching Characteristics

1000

100

200

500

50

20

0.2 1 2 10 20

tf

td(on)

tr

V = 300 V
V = ±15 V
Rg = 50
Tc = 25 °C

CC
GE

Ω

0.5 5

2000

td(off)

Collector Current I (A)

C

Switching Time t (ns)

Switching Characteristics

5

2SH17

Dynamic Input Characteristics

500

CE

400

300

200

V

CE

V

V = 400 V

CC

V = 400 V

CC

300 V
200 V

GE

20

16

12

8

GE

300 V

100

200 V

I = 10 A

C

Collector to Emitter Voltage V (V)

016243240

8

4

Gate to Emitter Voltage V (V)

0

Gate Charge Qg (nc)

6

2SH17

3

1

10 µ

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1 shot Pulse

s (t)

γ

0.3

0.1

0.03

Normalized Transient Thermal Impedance

0.01

Normalized Transient Thermal Impedance vs. Pulse Width

100 µ 1 m 10 m

θ γ θ

ch – c(t) = s (t) • ch – c

θ

ch – c = 2.5 °C/W, Tc = 25 °C

P

CM

Pulse Width PW (S)

PW

D =

T

PW

T

100 m 1 10

11.5 max

9.8 max

7.6 min

4.8 max

1.5 max

0.5

2.7 max

1.5 max

0.76 ±0.1

2.5 ±0.5

5.1 ±0.5

6.3 min

15.3 max

12.7 min

1.27

3.0max18.5 ±0.57.8 ±0.5

3.6

+ 0.1
– 0.08

f

Hitachi Code

EIAJ

JEDEC

TO–220AB

SC–46

—

• TO-220AB

Package Dimensions

Unit : mm

7

2SH17

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