Datasheet 2SH16 Datasheet (HIT)

Application

High speed power switching

Features

• High speed switching

• Low on saturation voltage

Table 1 Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

———————————————————————————————————————————

Collector to emitter voltage V

CES

600 V

———————————————————————————————————————————

Gate to emitter voltage V

GES

±20 V

———————————————————————————————————————————

Collector current I

C

75 A

———————————————————————————————————————————

Collector peak current ic(peak) 150 A

———————————————————————————————————————————

Collector dissipation PC* 200 W

———————————————————————————————————————————

Channel temperature T

j

150 °C

———————————————————————————————————————————

Storage temperature Tstg –55 to +150 °C

———————————————————————————————————————————

* Value at Tc = 25°C

TO–3PL

1. Gate

2. Collector

3. Emitter

1

2

3

1

2

3

1

2SH16

Silicon N-Channel IGBT

1st. Edition

Nov. 1994

ADE–208–289 (Z)

Table 2 Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

———————————————————————————————————————————

Collector to emitter breakdown V

(BR)CES

600 — — V IC= 100 µA, VGE= 0

voltage

———————————————————————————————————————————

Zero gate voltage collector I

CES

— — 0.5 mA VCE= 600 V, VGE= 0

current

———————————————————————————————————————————

Gate to emitter leak current I

GES

——±1µAVGE= ±20 V, VCE= 0

———————————————————————————————————————————

Gate to emitter cutoff current V

GE(off)

3.0 — 5.0 V IC= 1 mA, VCE= 10 V

———————————————————————————————————————————

Collector to emitter saturation V

CE(sat)

1 — 2.0 — V IC= 35 A, VGE= 15 V

voltage

———————————————————————————————————————————

Collector to emitter saturation V

CE(sat)

2 — 2.6 3.3** V IC= 75 A, VGE= 15 V

voltage

———————————————————————————————————————————

Input capacitance Cies — 6200 — pF VCE= 10 V, VGE= 0,

f = 1 MHz

———————————————————————————————————————————

Switching time t

r

— 700 — ns IC= 75 A,

————————————————

t

on

— 900 — RL= 4 Ω,

————————————————

t

f

— 300 600 VGE= ±15 V

————————————————

t

off

— 800 1600 Rg = 50 Ω

———————————————————————————————————————————

**V

CE(sat)

2 is specified at the correlated test condition (IC=50A)

2

2SH16

3

2SH16

300

Power vs. Temperature Derating

200

100

Collector Dissipation Pc (W)

0

50 100 150 200

Case Temperature Tc (°C)

Reverse Bias SOA

100

C

10

Maximum Safe Operation Area

100

C

10

(1 shot)

PW = 10 ms

DC Operation

(Tc = 25 °C)

1 ms

100 µs

1

0.1

Collector Current I (A)

Ta = 25 °C

0.01
1 10 100 1000

Collector to Emitter Voltage V (V)

Typical Output Characteristics

200

Pulse Test
Ta = 25 °C

160

C

V = 15 V

GE 12 V

120

CE

10 V

1

Collector Current I (A)

Tc = 25 °C

0.1
0 200 400 600 800

Collector to Emitter Voltage V (V)

CE

80

40

Collector Current I (A)

8 V

6 V

0426810

Collector to Emitter Voltage V (V)

CE

4

2SH16

200

160

C

120

Typical Transfer Characteristics

25 °C

Tc = –25 °C

75 °C

Collector to Emitter Saturation Voltage

vs. Gate to Emitter Voltage

10

I = 75 A

8

CE(sat)

V (V)

6

50 A

25 A

C

80

40

Collector Current I (A)

Pulse Test
V = 10 V

CE

048121620

Gate to Emitter Voltage V (V)

GE

Collector to Emitter Saturation Voltage

vs. Collector Current

50

Pulse Test
V = 15 V

GE

20

CE(sat)

10

V (V)

5

Tc =75 °C

25 °C

4

2

Pulse Test

Collector to Emitter Saturation Voltage

048121620

Gate to Emitter Voltage V (V)

GE

Typical Capacitance vs.

Collector to Emitter Voltage

10000

Cies

1000

Coes

2

1

Collector to Emitter Saturation Voltage

0.5
2 5 10 20 50

Collector Current I (A)

C

–25 °C

100 200

100

Capacitance C (pF)

V = 0

GE

Cres

f = 1 MHz

0 1020304050

Collector to Emitter Voltage V (V)

CE

5000

500

1000

2000

200

100

50

5 10 50 100 500

C

Ω

L
GE

I = 75 A
R = 4 (V = 300 V)
V = ±15 V
Tc = 25 °C

CC

tf

td(off)

td(on)

tr

Gate Resistance Rg ( )

Ω

Switching Time t (ns)

Switching Characteristics

5000

2000

1000

500

200

100

50

–25 0 25 50 75 100 125

C

L
GE

Ω

tr

td(off)

tf

td(on)

Ω

I = 75 A
R = 4
V = ±15 V
Rg = 50

Case Temperature Tc (°C)

Switching Time t (ns)

Switching Characteristics

1000

100

200

500

50

20
10

1001 5 10 50

Collector Current I (A)

C

Switching Time t (ns)

tf

td(on)

tr

V = 300 V
V = ±15 V
Rg = 50
Tc = 25 °C

CC
GE

Ω

td(off)

Switching Characteristics

5

2SH16

500

Dynamic Input Characteristics

V = 400 V

CC

CE

400

300

300 V
200 V

V

GE

200

V = 400 V

CC

300 V

100

Collector to Emitter Voltage V (V)

200 V

V

CE

I = 75 A

C

0 80 160 240 320 400

Gate Charge Qg (nc)

20

16

GE

12

8

4

Gate to Emitter Voltage V (V)

0

6

2SH16

3

Normalized Transient Thermal Impedance vs. Pulse Width

s (t)

γ

D = 1

1

0.5

0.3

0.2

0.1

0.1

0.05

0.02

0.03

0.01

Normalized Transient Thermal Impedance

1 shot pulse

0.01
10 µ

100 µ 1 m 10 m

θ γ θ

j – c(t) = s (t) • j – c

θ

j – c = 0.625 °C/W, Tc = 25 °C

P

DM

Pulse Width PW (S)

PW

D =

T

PW

T

100 m 1 10

Vin Monitor

Rg

Vin ± 15 V

Ic Monitor

V

CE

Monitor

D.U.T.

WaveformsSwitching Time Test Circuit

90%

10%

0

Vin

V

CE

R

L

V

CC

Ic

td(on)

10%

ton

90%

tr

td(off)

90%

10%

tf

toff

1.6

+0.25
–0.1

0.6

+0.25
–0.1

6.0 ± 0.2

20.0 ± 0.3

5.45 ± 0.5

5.45 ± 0.5

1

2

3

1.0

3.8

7.4

3.0

2.2

1.4

1.6

0.5

20.0 ± 0.6

2.5 ± 0.3

26.0 ± 0.3

5.0 ± 0.2

2.8 ± 0.2

3.3 ± 0.2

Hitachi Code

EIAJ

JEDEC

TO–3PL

—
—

• TO–3PL

Package Dimensions

Unit : mm

7

2SH16

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