Datasheet 2SH14 Datasheet (HIT)

Application

High speed power switching

Features

• High speed switching

• Low on saturation voltage

Table 1 Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

———————————————————————————————————————————

Collector to emitter voltage V

CES

600 V

———————————————————————————————————————————

Gate to emitter voltage V

GES

±20 V

———————————————————————————————————————————

Collector current I

C

30 A

———————————————————————————————————————————

Collector peak current ic(peak) 60 A

———————————————————————————————————————————

Collector dissipation PC* 100 W

———————————————————————————————————————————

Channel temperature T

j

150 °C

———————————————————————————————————————————

Storage temperature Tstg –55 to +150 °C

———————————————————————————————————————————

* Value at Tc = 25°C

1. Gate

2. Collector

3. Emitter

TO–3P

1

2

3

1

2

3

1

2SH14

Silicon N-Channel IGBT

1st. Editon

Feb. 1995

ADE–208–287 (Z)

Table 2 Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

———————————————————————————————————————————

Collector to emitter breakdown V

(BR)CES

600 — — V IC= 100 µA, VGE= 0

voltage

———————————————————————————————————————————

Zero gate voltage collector I

CES

— — 0.5 mA VCE= 600 V, VGE= 0

current

———————————————————————————————————————————

Gate to emitter leak current I

GES

——±1µAVGE= ±20 V, VCE= 0

———————————————————————————————————————————

Gate to emitter cutoff current V

GE(off)

3.0 — 5.0 V IC= 1 mA, VCE= 10 V

———————————————————————————————————————————

Collector to emitter saturation V

CE(sat)

1 — 2.0 — V IC= 15 A, VGE= 15 V

voltage

———————————————————————————————————————————

Collector to emitter saturation V

CE(sat)

2 — 2.6 3.3** V IC= 30 A, VGE= 15 V

voltage

———————————————————————————————————————————

Input capacitance Cies — 2600 — pF VCE= 10 V, VGE= 0,

f = 1 MHz

———————————————————————————————————————————

Switching time t

r

— 160 — ns IC= 30 A,

————————————————

t

on

— 300 — RL= 10 Ω,

————————————————

t

f

— 300 600 VGE= ±15 V

————————————————

t

off

— 600 1200 Rg = 50 Ω

———————————————————————————————————————————

**V

CE(sat)

2 is specified at the correlated test condition (IC=20A)

2

2SH14

3

2SH14

200

Power vs. Temperature Derating

150

100

50

Collector Dissipation Pc (W)

0

50 100 150 200

Case Temperature Tc (°C)

Reverse Bias SOA

100

C

10

100

C

10

PW = 10 ms

(1 shot)

DC Operation

(Tc = 25 °C)

1 ms

100 µs

1

Maximum Safe Operation Area

0.1

Collector Current I (A)

Ta = 25 °C

0.01
1 10 100 1000

Collector to Emitter Voltage V (V)

Typical Output Characteristics

100

Pulse Test
Ta = 25 °C

80

C

60

V = 15 V

GE

12 V

CE

1

Collector Current I (A)

Tc = 25 °C

0.1
0 200 400 600 800

Collector to Emitter Voltage V (V)

CE

40

20

Collector Current I (A)

10 V

8 V

6 V

0426810

Collector to Emitter Voltage V (V)

CE

4

2SH14

100

Typical Transfer Characteristics

80

C

60

Tc = –25 °C

25 °C

75 °C

40

20

Collector Current I (A)

Pulse Test
V = 10 V

CE

048121620

Gate to Emitter Voltage V (V)

GE

Collector to Emitter Saturation Voltage

vs. Collector Current

50

Pulse Test
V = 15 V

GE

20

Collector to Emitter Saturation Voltage

vs. Gate to Emitter Voltage

10

I = 30 A

8

CE(sat)

V (V)

6

20 A

10 A

C

4

2

Pulse Test

Collector to Emitter Saturation Voltage

048121620

Gate to Emitter Voltage V (V)

GE

Typical Capacitance vs.

Collector to Emitter Voltage

10000

Cies

CE(sat)

10

V (V)

Tc =75 °C

5

25 °C

–25 °C

2

1

Collector to Emitter Saturation Voltage

0.5
12 51020 50

Collector Current I (A)

1000

Coes

100

Capacitance C (pF)

V = 0

GE

f = 1 MHz

100

C

100

0 1020304050

Collector to Emitter Voltage V (V)

Cres

CE

1000

100

200

500

50

20
10

5 10 50 100 500

Gate Resistance Rg ( )

Ω

Switching Time t (ns)

tf

td(on)

tr

td(off)

C

Ω

L
GE

I = 30 A
R =10 (V = 300 V)
V = ±15 V
Tc = 25 °C

CC

Switching Characteristics

1000

500

200

100

50

20
10

–25 0 25 50 75 100 125

Case Temperature Tc (°C)

Switching Time t (ns)

tf

td(on)

tr

C

L
GE

Ω

Ω

I = 30 A
R = 10
V = ±15 V
Rg = 50

td(off)

Switching Characteristics

1000

100

200

500

50

20
10

1001 5 10 50

Collector Current I (A)

C

Switching Time t (ns)

tf

td(on)

tr

td(off)

V = 300 V
V = ±15 V
Rg = 50
Tc = 25 °C

CC
GE

Ω

Switching Characteristics

5

2SH14

500

Dynamic Input Characteristics

V = 400 V

CC

CE

400

300 V
200 V

300

V

GE

200

V = 400 V

CC

300 V

100

Collector to Emitter Voltage V (V)

200 V

V

CE

I = 30 A

C

0 40 80 120 160 200

Gate Charge Qg (nc)

20

16

GE

12

8

4

Gate to Emitter Voltage V (V)

0

6

2SH14

3

Normalized Transient Thermal Impedance vs. Pulse Width

s (t)

γ

D = 1

1

0.5

0.3

0.2

0.1

0.1

0.05

0.02

0.03

Normalized Transient Thermal Impedance

0.01

1 shot Pulse

0.01
10 µ

100 µ 1 m 10 m

Pulse Width PW (S)

θ γ θ

ch – c(t) = s (t) • ch – c

θ

ch – c = 1.25 °C/W, Tc = 25 °C

P

CM

PW
T

D =

100 m 1 10

PW

T

Vin Monitor

Rg

Vin ± 15 V

Ic Monitor

V

CE

Monitor

D.U.T.

WaveformsSwitching Time Test Circuit

90%

10%

0

Vin

V

CE

R

L

V

CC

Ic

td(on)

ton

10%

90%

tr

td(off)

90%

10%

tf

toff

16.0 max

1.0 ± 0.2

1.0 typ

3.2 ± 0.2

φ

5.0 ± 0.3

14.9 ± 0.2

20.1 max18.0 ± 0.5

2.0 typ

0.5 typ

1.4 max

2.0 typ

0.9 typ

1.0 typ

3.6 typ

5.45 ± 0.2 5.45 ± 0.2

5.0 max

0.3 typ

1.5 typ

2.8 typ

0.6 ± 0.2

1.6 typ

Hitachi Code

EIAJ

JEDEC

TO–3P

SC–65

—

• TO–3P

Package Dimensions

Unit : mm

7

2SH14

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