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固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD998
DESCRIPTION
·With TO-3PML package
·Complement to type 2SB778
APPLICATIONS
·High power amplifier applications
·Recommended for 45~50W audio
frequency amplifier output stage
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS MAX UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 10 A
IB Base current 1.0 A
PC Collector dissipation TC=25℃ 80 W
Base
Fig.1 simplified outline (TO-3PML) and symbol
Collector-base voltage Open emitter 120 V
Collector-emitter voltage Open base 120 V
Emitter-base voltage Open collector 5 V
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD998
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
hFE DC current gai n IC=1A ; VCE=5V 55 160
fT Transition frequency IC=1A ; VCE=5V 12 MHz
COB Collector output capacitance f=1MHz;VCB=10V 170 pF
Collector-emitter breakdown voltage IC=50mA ;IB=0 120 V
Collector-emitter saturation voltage IC=5A; IB=0.5A 2.5 V
Base-emitter on voltage IC=0.5A;VCE=5V 1.5 V
Collector cut-off current VCB=120V; IE=0 10
Emitter cut-off current VEB=5V; IC=0 10
μA
μA
hFE Classifications
R O
55-110 80-160
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD998
PACKAGE OUTLINE
Fig.2 outline dimensions
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Page 4
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD998
4
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