Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD993
DESCRIPTION
·High Breakdown Voltage : V
= 1500V (Min)
CBO
·Collector-Emitter Saturation Voltage: V
CE(sat)
·Built-in Damper Diode
APPLICATIONS
·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(T
= 10V(Max.)@ IC= 2.5A
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CP
C
T
J
stg
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 600 V
Emitter-Base Voltage 6 V
Collector Current- Continuous 3 A
Collector Current- Peak 6 A
Collector Power Dissipation
= 25℃
@ T
C
Junction Temperature 150
Storage Temperature Range -40~150
50 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD993
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CE
V
BE
I
CES
I
EBO
h
(sat)
(sat)
FE
Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0; L= 35mH 600 V
Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 6 V
Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.6A 10 V
Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.6A 1.3 V
Collector Cutoff Current VCB= 1500V; VEB= 0 1.0 mA
Emitter Cutoff Current VEB= 4V; IC= 0 44 133 mA
DC Current Gain IC= 2A; VCE= 5V 3 15
isc Website：www.iscsemi.cn
2
Loading...