Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD985 2SD986
DESCRIPTION ·
·With TO-126 package
·Complement to type 2SB794/795
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
APPLICATIONS
·For low frequency power amplifier
and power switching applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 150 V
CBO
2SD985 60
V
Collector-emitter voltage
CEO
2SD986
V
Emitter -base voltage Open collector 8 V
EBO
IC Collector current
ICM Collector current-Peak
IB Base current 0.15 A
PT Total power dissipation
Open base
Ta=25℃
TC=25℃
80
±1.5
±3.0
1.0
10
V
A
A
W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD985 2SD986
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter saturation voltage IC=1.0A; IB=1.0mA 1.5 V
CEsat
V
Base-emitter saturation voltage IC=1.0A; IB=1.0mA 2.0 V
BEsat
2SD985 VCB=60V; IE=0
I
Collector cut-off current
CBO
2SD986 V
I
Emitter cut-off current VEB=5V; IC=0 2.0 mA
EBO
=80V; IE=0
CB
10
μA
h
DC current gain IC=0.5A ; VCE=2V 1000
FE-1
h
DC current gain IC=1.0A ; VCE=2V 2000 30000
FE-2
Switching times
ton Turn-on time 0.5 μs
I
=1.0A;IB1=-IB2=1.0mA
C
=50V; RL=50Ω
V
CC
1.0 μs
h
ts
tf
FE-2
Storage time 1.0 μs
Fall time
Classifications
M L K
2000-5000 4000-10000 8000-30000
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD985 2SD986
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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