Datasheet 2SD970K Datasheet (HIT)

2SD970(K)

Silicon NPN Triple Diffused

Application

Medium speed and power switching complementary pair with 2SB791(K)

Outline

TO-220AB

2 kΩ

(Typ)

200 Ω

(Typ)

1

2

3

1. Base

2. Collector
(Flange)

3. Emitter

1

2

3

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V

CBO

120 V

Collector to emitter voltage V

CEO

120 V

Emitter to base voltage V

EBO

7V

Collector current I

C

8A

Collector peak current I

C(peak)

12 A

Collector power dissipation PC*

1

40 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. Value at TC = 25°C.

2SD970(K)

2

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to emitter breakdown
voltage

V

(BR)CEO

120 — — V IC = 25 mA, RBE = ∞

Emitter to base breakdown
voltage

V

(BR)EBO

7——VI

E

= 50 mA, IC = 0

Collector cutoff current I

CBO

— — 100 µAV

CB

= 120 V, IE = 0

I

CEO

——10µAV

CE

= 100 V, RBE = ∞

DC current transfer ratio h

FE

1000 — 20000 VCE = 3 V, IC = 4 A*

1

Collector to emitter saturation V

CE(sat)1

— — 1.5 V IC = 4 A, IB = 8 mA*

1

voltage V

CE(sat)2

— — 3.0 V IC = 8 A, IB = 80 mA*

1

Base to emitter saturation V

BE(sat)1

— — 2.0 V IC = 4 A, IB = 8 mA*

1

voltage V

BE(sat)2

— — 3.5 V IC = 8 A, IB = 80 mA*

1

Turn on time t

on

— 0.4 — µsI

C

= 4 A, IB1 = –IB2 = 8 mA

Storage time t

stg

— 5.4 — µs

Fall time t

f

— 1.1 — µs

Note: 1. Pulse test.

0 50 100 150

Case temperature T

C

(°C)

Collector power dissipation Pc (W)

Maximum Collector Dissipation Curve

20

40

60

0.03

0.1

0.3

1.0

3

10

30

Collector to emitter voltage V

CE

(V)

Collector current I

C

(A)

1 3 10 30 100 300 1,000

Area of Safe Operation

1 µs

100 µs

1 ms

PW = 10 ms

DC Operation (T

C

= 25°C)

iC

(peak)

IC

max

(Continuous)

Ta = 25°C
1 shot pulse

2SD970(K)

3

Collector to emitter voltage VCE (V)

Collector current I

C

(A)

0

Typical Output Characteristics

12345

2

4

6

8

10

TC = 25

°C

IB = 0

0.6 mA

2.0

P

C

= 25 W

1.8

1.6

1.4

1.2

1.0

0.8

100

300

1,000

3,000

10,000

Collector current I

C

(A)

DC current transfer ratio h

FE

0.1 0.3 1.0 3 10

DC Current Transfer Ratio

vs. Collector Current

T

C

= 75°C

25°C

–25°C

VCE = 3 V

0.1

0.2

0.5

1.0

2

5

10

Collector current I

C

(A)

0.1 0.2 0.5 1.0 2 5 10

Collector to emitter saturation voltage V

CE

(sat)

(V)

Base to emitter saturation voltage V

BE

(sat)

(V)

Saturation Voltage vs. Collector Current

VBE

(sat)

VCE

(sat)

lC/lB = 200

lC/lB = 500

500

200

TC = 25°C

0.01

0.03

0.1

0.3

1.0

3

10

Collector current I

C

(A)

Switching time t (µs)

0.1 0.3 1.0 3 10

Switching Time vs. Collector Current

Ta = 25°C
V

CC

= 30 V

I

C

= 500 IB1 = –500 I

B2

t

f

t

on

t

stg

2SD970(K)

4

0.01

0.03

0.1

0.3

1.0

3

10

Thermal resistance θ

j-c

(°C/W)

1 10 100 1,000 (s)
1 10 100 1,000 (ms)

Time t

Transient Thermal Resistance

1 to 1,000 ms

1 to 1,000 s

TC = 25°C

0.5 ± 0.1

2.54 ± 0.5

0.76 ± 0.1

14.0 ± 0.5 15.0 ± 0.3

2.79 ± 0.218.5 ± 0.57.8 ± 0.5

10.16 ± 0.2

2.54 ± 0.5

1.26 ± 0.15

4.44 ± 0.2

2.7 MAX

1.5 MAX

11.5 MAX

9.5

8.0

1.27

6.4

+0.2

–0.1

φ 3.6

+0.1

-0.08

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-220AB
Conforms
Conforms

1.8 g

Unit: mm

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