Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD970
DESCRIPTION
·With TO-220 package
·High DC current gain
·DARLINGTON
·Complement to type 2SB791
APPLICATIONS
·For medium speed and power
switching applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 8 A
ICM Collector current-peak 12 A
PC Collector dissipation TC=25℃ 40 W
Collector-base voltage Open emitter 120 V
Collector-emitter voltage Open base 120 V
Emitter-base voltage Open collector 7 V
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD970
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat-1
V
CEsat-2
V
BEsat-1
V
BEsat-2
I
CBO
I
CEO
h
FE
Switching times
Collector-emitter breakdown voltage IC=25mA ;RBE=0 120 V
Emitter-base breakdown voltage IE=50mA ; IC=0 7 V
Collector-emitter saturation voltage IC=4A ;IB=8mA 1.5 V
Collector-emitter saturation voltage IC=8A ;IB=80mA 3.0 V
Base-emitter saturation voltage IC=4A ;IB=8mA 2.0 V
Base-emitter saturation voltage IC=8A ;IB=80mA 3.5 V
Collector cut-off current VCB=120V; IE=0 100
V
Collector cut-off current
DC current gain IC=4A ; VCE=3V 1000 20000
=100V; RBE=∞
CE
10
μA
μA
ton Turn-on time 0.4
ts Storage time 5.4
tf Fall time
2
IC=4A ;IB1=-IB2=8mA
1.1
μs
μs
μs
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD970
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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