Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD961
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
·Good Linearity of h
·Low Collector Saturation Voltage
: V
CE(sat)
·Complement to Type 2SB869
APPLICATIONS
·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(T
= 80V(Min)
FE
= 0.5V(Max)@IC= 4A
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
C
T
J
stg
Collector-Base Voltage 130 V
Collector-Emitter Voltage 80 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 5 A
Collector Current-Peak 10 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150
Storage Temperature Range -55~150
40 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD961
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
Switching Times
Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 80 V
Collector-Emitter Saturation Voltage IC= 4A; IB= 0.2A B 0.5 V
Base-Emitter Saturation Voltage IC= 4A; IB= 0.2A B 1.5 V
Collector Cutoff Current VCB= 100V; IE= 0 10
Emitter Cutoff Current VEB= 5V; IC= 0 50
DC Current Gain IC= 0.1A; VCE= 2V 45
DC Current Gain IC= 0.5A; VCE= 2V 60 260
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 30 MHz
μA
μA
Turn-On Time 0.5
I
Storage Time 1.5
Fall Time
= 2A; IB1= -IB2= 0.2A
C
0.15
Classifications
h
t
on
t
s
t
f
FE-2
R Q P
60-120 90-180 130-260
isc Website：www.iscsemi.cn
2
μs
μs
μs
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