Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD959
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·Complement to type 2SB867
·Excellent linearity of h
APPLICATIONS
·For power switching applications
PINNING
PIN DESCRIPTION
FE
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current (DC) 3 A
ICM Collector current-peak 6 A
PC Collector power dissipation TC=25℃ 30 W
Collector-base voltage Open emitter 130 V
Collector-emitter voltage Open base 80 V
Emitter-base voltage Open collector 7 V
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD959
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
fT Transition frequency IC=0.5A ; VCE=10V 30 MHz
Switching times
ton Turn-on time 0.5
ts Storage time 2.5
Collector-emitter breakdown voltage IC=10mA ;IE=0 80 V
Collector-emitter saturation voltage IC=2A; IB=0.1A 0.5 V
Base-emitter saturation voltage IC=2A; IB=0.1A 1.5 V
Collector cut-off current VCB=100V;IE=0 10
Emitter cut-off current VEB=5V; IC=0 50
DC current gain IC=0.1A ; VCE=2V 45
DC current gain IC=0.5A ; VCE=2V 60 260
IC=0.5A
I
=-IB2=50mA
B1
μA
μA
μs
μs
tf Fall time
h
60-120 90-180 130-260
classifications
FE-2
R Q P
0.15
μs
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD959
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
Page 4
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD959
4
Page 5
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD959
5
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