Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD951
DESCRIPTION
·With TO-3 package
·Built-in damper diode
·High voltage capability
APPLICATIONS
·Line-operated horizontal deflection
output applications
PINNING(see fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
EBO
IC Collector current 3 A
ICM Collector current-peak 5 A
PT Total power dissipation
Tj Junction temperature 130
Collector-base voltage Open emitter 1500 V
Emitter-base voltage Open collector 5 V
T
=25℃
C
65 W
℃
T
Storage temperature -65~130
stg
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD951
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Emitter-base breakdown voltage IE=500m A;IC=0 5 V
(BR)EBO
V
Collector-emitter saturation voltage IC=2 .5A;IB=0.8 A 5.0 V
CEsat
V
Base-emitter saturation voltage IC=2 .5A;IB=0.8 A 1.5 V
BEsat
VCB=750V;IE=0 50
I
Collector cut-off current
CBO
=1500V;IE=0
V
CB
h
DC current gain IC=1A ; VCE=5V 8
FE-1
h
DC current gain IC=2.5A ; VCE=10V 3
FE-2
VF Diode forward voltage IF=4A 1.7 V
tf Fall time 0.9
IC=2.5A;I
ts Storage time
=0.8A;LB=5μH
B
end
1.0 mA
11
μA
μs
μs
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD951
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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