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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD905
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·For high voltage power switching TV
horizontal deflection output applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 8 A
ICM Collector current-peak 10 A
Collector-base voltage Open emitter 1400 V
Collector-emitter voltage Open base 650 V
Emitter-base voltage Open collector 5 V
T
PC Collector power dissipation
Tj Junction temperature 150
T
Storage temperature -45~150
stg
=25℃
C
50 W
℃
℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD905
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BEsat
I
CES
I
EBO
Collector-emitter breakdown voltage IC=10mA ;RBE=∞ 650 V
Emitter-base breakdown voltage IE=10mA ; IC=0 5 V
Collector-emitter saturation voltage IC=8A;IB=1.5A 10 V
Base-emitter saturation voltage IC=8A;IB=1.5A 1.5 V
Collector cut-off current VCE=1400V ; RBE=0 0.5 mA
Emitter cut-off current VEB=5V; IC=0 0.5 mA
hFE DC current gai n IC=1A ; VCE=5V 8 36
tf Fall time IC=6.8A; IB1=1.1A;LB=0 1.0 μs
2
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Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD905
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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