Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD904
DESCRIPTION
·High Breakdown Voltage : V
·Low Collector Saturation Voltage-
·Built-in Damper Diode
APPLICATIONS
·Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(T
= 1500V (Min)
CBO
: V
CE(sat)
= 5.0V(Max.)@ IC= 3A
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
C
T
J
stg
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 600 V
Emitter-Base Voltage 6 V
Collector Current- Continuous 7 A
Collector Current- Peak 10 A
Collector Power Dissipation
= 25℃
@ T
a
Collector Power Dissipation
= 25℃
@ T
C
Junction Temperature 150 ℃
Storage Temperature Range -40~150 ℃
3
W
50
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD904
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CES
I
EBO
h
FE-1
h
FE-2
V
ECF
Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0, L= 35mH 600 V
Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 6 V
Collector-Emitter Saturation Voltage IC= 3A; IB= 0.75A B 5.0 V
Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.6 V
Collector Cutoff Current VCB= 1500V; VBE= 0 1.0 mA
Collector Cutoff Current VEB= 4V; IC= 0 44 100 mA
DC Current Gain IC= 1A; VCE= 5V 8
DC Current Gain IC= 4A; VCE= 5V 5 10
C-E Diode Forward Voltage IF= 4A 2.0 V
isc Website：www.iscsemi.cn
2
Loading...