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UTC 2SD882S NPN EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER LOW VOLTAGE
TRANSISTOR
FEATURES
*High current output up to 3A
*Low saturation voltage
*Complement to 2SB772S
APPLICATIONS
* Audio power amplifier
* DC-DC convertor
* Voltage regulator
1:EMITTER 2:COLLECTOR 3:BASE
1
TO-92
ABSOLUTE MAXIMUM RATINGS
PARAMETERS SYMBOL RATING UNIT
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector dissipation( Tc=25°C) Pc 10 W
Collector dissipation( Ta=25°C) Pc 1 W
Collector current(DC) Ic 3 A
Collector current(PULSE) Ic 7 A
Base current I
Junction Temperature T
Storage Temperature T
ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector cut-off current I
Emitter cut-off current I
DC current gain(note 1) h
Collector-emitter saturation voltage VCE(sat) Ic=2A,IB=0.2A 0.3 0.5 V
Base-emitter saturation voltage VBE(sat) Ic=2A,IB=0.2A 1.0 2.0 V
Current gain bandwidth product f
Output capacitance Cob VCB=10V,IE=0,f=1MHz 45 pF
Note 1:Pulse test:PW<300µs,Duty Cycle<2%
( Ta=25°C ,unless otherwise specified )
CBO
CEO
EBO
B
j
STG
(Ta=25°C,unless otherwise specified)
CBO
EBO
h
FE1
FE2
T
VCB=30V,IE=0 1000 nA
VEB=3V,Ic=0 1000 nA
VCE=2V,Ic=20mA
VCE=2V,Ic=1A
VCE=5V,Ic=0.1A 80 MHz
40 V
30 V
5 V
0.6 A
150 °C
-55 ~ +150 °C
30
200
100
150 400
UTC
1
UNISONIC TECHNOLOGIES CO. LTD
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UTC 2SD882S NPN EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE2
RANK Q P E
RANGE 100-200 160-320 200-400
TYPICAL PARAMETERS PERFORMANCE
Fig.1 Static characteristics
1.6
1.2
0.8
-Ic,Collector current(A)
0.4
0
3
10
2
10
1
10
Output Capacitance(pF)
0
10
10
-IB=9mA
-IB=8MA
-IB=7mA
-IB=6mA
-IB=5mA
-IB=4mA
-IB=3mA
-IB=2mA
-IB=1mA
0 4 8 12 16 20
-Collector-Emitter voltage(V)
Fig.4 Collector Output
capacitance
IE=0
f=1MHz
0
-1
10
-Collector-Base Voltage(v)
-2
10
-3
10
Fig.7 DC current gain
3
10
FE
2
10
1
10
DC current Gain,H
0
10
10010
-Ic,Collector current(mA) -Ic,Collector current(mA)
1
VCE=-2V
10210310
4
Fig.2 Derating curve of safe
150
100
50
- Ic Derating(%)
0
Tc,Case Temperature(¢XC)
Fig.5 Current gainbandwidth product
3
10
2
10
1
10
(MHz), Current gain-
bandwidth product
T
F
0
10
-2
10
Ic,Collector current(A)
Fig.8 Saturation Voltage
4
10
3
10
2
10
VCE(sat)
1
10
-Saturation Voltage(mV)
0
10
10010
operating areas
S/b limited
Dissipation limited
VCE=5V
IB=8mAIB=8mA
-1
10
VBE(sat)
1
10210310
Fig.3 Power Derating
12
8
4
Power Dissipation(W)
200150100500-50
0
Tc,Case Temperature(¢XC)
200150100500-50
Fig.6 Safe operating area
Ic(max),Pulse
1
10
0
10
-1
10
Ic(max),DC
10mS
-Ic,Collector current(A)
-2
0
10
10
1
10
4
0
10
Collector-Emitter Voltage
0.1mS
1mS
1
10
2
10
UTC
2
UNISONIC TECHNOLOGIES CO. LTD
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