Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD873
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
(BR)CEO
·High Power Dissipation
·High Current Capability
APPLICATIONS
·High power amplifier applications.
·High power switching applications.
·DC-DC converter applications.
·Regulator applications.
ABSOLUTE MAXIMUM RATINGS(T
= 140V (Min)
=25℃)
a
SYMBOL PARAMETER MAX UNIT
V
V
V
T
CBO
CEO
EBO
I
C
I
B
P
C
T
stg
Collector-Base Voltage 160 V
Collector-Emitter Voltage 140 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 16 A
B Base Current-Continuous 4 A
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 175 ℃
j
Storage Temperature Range -65~175 ℃
150 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD873
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
V
BE
I
I
h
h
C
(sat)
(on)
CBO
EBO
FE-1
FE-2
OB
f
T
Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 140 V
Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A B 1.4 V
Base-Emitter On Voltage IC= 8A; VCE= 4V 2.2 V
Collector Cutoff Current VCB= 140V; IE= 0 0.1 mA
Emitter Cutoff Current VEB= 7V; IC= 0 0.1 mA
DC Current Gain IC= 8A; VCE= 4V 15 60
DC Current Gain IC= 16A; VCE= 4V 5
Output Capacitance
Current-Gain—Bandwidth Product IC= 1A; VCE= 4V 1.5 MHz
= 0; VCB= 10V; f
I
E
= 1.0MHz
test
350 pF
Switching Times
t
on
t
stg
t
f
Turn-on Time 2.5 μs
Storage Time 4.5
Fall Time
isc Website：www.iscsemi.cn
VCC= 50V, RL= 10Ω,IB1= -IB2= 0.5A
1.4
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