Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD866 2SD866A
DESCRIPTION ·
·With TO-220C package
·Low collector saturation voltage
·Excellent linearity of h
·High collector current
APPLICATIONS
·For power switching applications
PINNING
PIN DESCRIPTION
FE
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Tc=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
I
CBO
CEO
EBO
I
C
CM
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage Open collector 7 V
Collector current 7 A
Collector current-peak
℃)
2SD866 130
Open emitter
2SD866A
2SD866 80
Open base
2SD866A
150
100
15 A
V
V
P
C
T
j
T
stg
Collector power dissipation TC=25℃ 40 W
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD866 2SD866A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
h
FE-1
FE-2
f
T
Collector-emitter
breakdown voltage
Collector-emitter saturation voltage IC=5 A;IB=0.25 A B 0.5 V
Base-emitter saturation voltage IC=5 A;IB=0.25 A B 1.5 V
Collector cut-off current VCB=100V; IE=0 10 μA
Emitter cut-off current VEB=5V; IC=0 50 μA
DC current gain IC=0.1A ; VCE=2V 45
DC current gain IC=3A ; VCE=2V 60 260
Transition frequency IC=0.5A ; VCE=10V 30 MHz
Switching times
2SD866 80
2SD866A
IC=0.2A; IB=0
100
V
t
on
t
s
t
f
Turn-on time 0.5 μs
Storage time 1.5 μs
Fall time
h
classifications
FE-2
R Q P
60-120 90-180 130-260
IC=3A;IB1=-IB2=0.3 A
0.1 μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD866 2SD866A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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