Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD864
DESCRIPTION
·High DC Current Gain= 1000(Min)@ I
: h
FE
·Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
= 120V(Min)
·Low Collector-Emitter Saturation Voltage-
: V
= 1.5V(Max)@ I
CE(sat)
·Complement to Type 2SB765
APPLICATIONS
·Medium speed and power switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
= 1.5A
C
C
= 1.5A
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO
V
I
I
CM
P
T
T
EBO
C
C
stg
Collector-Base Voltage 120 V
Collector-Emitter Voltage 120 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 3 A
Collector Current-Peak 6 A
Collector Power Dissipation
=25℃
T
C
Junction Temperature 150
j
Storage Temperature Range -55~150
30 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor 2SD864
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CE(
sat
V
CE(
sat
V
BE(
sat
V
BE(
sat
I
CBO
I
CEO
h
FE
Switching times
Collector-Emitter Breakdown Voltage IC= 25mA, RBE= ∞ 120 V
Emitter-Base Breakdown Voltage IE= 50mA , IC= 0 7 V
Collector-Emitter Saturation Voltage IC= 1.5A, IB= -3mA 1.5 V
)-1
Collector-Emitter Saturation Voltage IC= 3A, IB= -30mA B 3.0 V
)-2
Base-Emitter Saturation Voltage IC= 1.5A, IB= -3mA 2.0 V
)-1
Base-Emitter Saturation Voltage IC= 3A, IB= -30mA B 3.5 V
)-2
Collector Cutoff Current VCB= 120V, IE= 0 100 μA
Collector Cutoff Current VCE= 100V, RBE= ∞ 10 μA
DC Current Gain IC= 1.5A; VCE= 3V 1000 20000
t
on
t
stg
t
f
Turn-on Time 0.5 μs
Storage Time 4.5 μs
Fall Time
IC= 1.5A; IB1= -IB2= 3mA
isc Website：www.iscsemi.cn
1.1 μs
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