Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD859
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
·High Collector Power Dissipation
APPLICATIONS
·Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
= 250V(Min)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
C
T
J
stg
Collector-Base Voltage 350 V
Collector-Emitter Voltage 250 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 0.75 A
Collector Current-Peak 1.5 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
35 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD859
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
(sat)
V
BE(on)
I
CEO
I
CES
I
EBO
h
FE-1
h
FE-2
Switching Times
Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 250 V
Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 1.0 V
Base-Emitter On Voltage IC= 1A; VCE= 10V 1.5 V
Collector Cutoff Current VCE= 150V; IB= 0 1 mA
Collector Cutoff Current VCE= 350V; VBE= 0 1 mA
Emitter Cutoff Current VEB= 5V; IC= 0 1 mA
DC Current Gain IC= 0.3A; VCE= 10V 40 250
DC Current Gain IC= 1A; VCE= 10V 10
Turn-On Time 0.2
I
= 1A; IB1= -IB2= 0.1A
C
Turn-Off T ime
2.0
Classifications
h
t
t
on
off
FE-1
R Q P
40-90 70-150 120-250
isc Website：www.iscsemi.cn
2
μs
μs
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