Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD856
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
·Good Linearity of h
·Wide Area of Safe Operation
·Complement to Type 2SB761
APPLICATIONS
·Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
= 60V(Min)
FE
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
C
T
J
stg
Collector-Base Voltage 60 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 6 V
Collector Current-Continuous 3 A
Collector Current-Peak 5 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150
Storage Temperature Range -55~150
35 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD856
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
(sat)
V
BE(on)
I
CEO
I
CES
I
EBO
h
FE-1
h
FE-2
Switching Times
Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 60 V
Collector-Emitter Saturation Voltage IC= 3A; IB= 0.375A B 1.2 V
Base-Emitter On Voltage IC= 3A; VCE= 4V 1.8 V
Collector Cutoff Current VCE= 30V; IB= 0 B 300
Collector Cutoff Current VCE= 60V; VBE= 0 200
Emitter Cutoff Current VEB= 6V; IC= 0 1 mA
DC Current Gain IC= 1A; VCE= 4V 40 250
DC Current Gain IC= 3A; VCE= 4V 10
μA
μA
Turn-On Time 0.5
I
= 1A; IB1= -IB2= 0.1A
C
Turn-Off T ime
3.0
Classifications
h
t
t
on
off
FE-1
R Q P
40-90 70-150 120-250
isc Website：www.iscsemi.cn
2
μs
μs
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