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INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD855
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
·Good Linearity of h
·Wide Area of Safe Operation
·Complement to Type 2SB760
APPLICATIONS
·Medium power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
= 60V(Min)
FE
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
C
T
J
stg
Collector-Base Voltage 60 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 1 A
Collector Current-Peak 2 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150
Storage Temperature Range -55~150
30 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD855
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE
V
BE(on)
I
I
I
h
h
h
Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 60 V
(sat)
CEO
CES
EBO
FE-1
FE-2
FE-1
Collector-Emitter Saturation Voltage IC= 1A; IB= 0.125A B 1.0 V
Base-Emitter On Voltage IC= 1A; VCE= 4V 1.3 V
Collector Cutoff Current VCE= 60V; IB= 0 B 300
Collector Cutoff Current VCE= 80V; IE= 0 200
Emitter Cutoff Current VEB= 5V; IC= 0 1 mA
DC Current Gain IC= 0.2A; VCE= 4V 40 450
DC Current Gain IC= 1A; VCE= 4V 15
Classifications
μA
μA
R Q P O
40-90 70-150 120-250 200-450
isc Website：www.iscsemi.cn
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