Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD849
DESCRIPTION ·
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·Line-operated horizontal deflection
output applications
PINNING(see fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 3 A
ICM Collector current-peak 5 A
PT Total power dissipation TC=90℃ 25 W
Tj Junction temperature 150 ℃
Base
Fig.1 simplified outline (TO-3) and symbol
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 600 V
Emitter-base voltage Open collector 5 V
T
Storage temperature -65~150 ℃
stg
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD849
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
h
FE-1
h
FE-2
tf Fall time 0.9
ts Storage time
Collector-emitter sustaining voltage IC=0.1A; IB=0 600 V
Emitter-base breakdown votage IE=10mA; IC=0 5 V
Collector-emitter saturation voltage IC=3 A;IB=1A 5.0 V
Base-emitter saturation voltage IC=3 A;IB=1A 1.5 V
VCB=750V;IE=0 0.1
Collector cut-off current
=1500V;IE=0
V
CB
DC current gain IC=0.5A ; VCE=5V 8
DC current gain IC=3A ; VCE=10V 4 12
I
=3 A;I
C
=1A;LB=20μH
B
end
1.0
13
mA
μs
μs
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD849
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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