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INCHANGE Semiconductor isc Product Specification
oltage
oltage
isc Silicon NPN Power Transistor 2SD847
DESCRIPTION
·Good Linearity of hFE
·High Collector Current
·Wide Area of Safe Operation
·High Reliability
·Complement to Type 2SB757
APPLICATIONS
·Audio amplifier applications
·Series regulators applications
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
IC Collector Current-Continuous 15 A
IB Base Current-Continuous 5 A
PC
TJ Junction Temperature 150 ℃
T
stg
Collector-Base V
Collector-Emitter V
Emitter-Base voltage 5 V
Collector Power Dissipation
@ TC=25℃
Storage Temperature Range -55~150
PARAMETER VALUE UNIT
40 V
40 V
80 W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER MAX UNIT
℃
R
th j-c
Thermal Resistance,Junction to Case 1.56 ℃/W
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SD847
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 40 V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage IE= 0.1mA ; IC= 0 5 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 0.8 V
Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.8 V
Collector Cutoff Current VCB= 40V ; IE= 0 0.01 mA
Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA
PARAMETER CONDITIONS MIN TYP. MAX UNIT
IC= 0.1mA ; IE= 0 40 V
hFE DC Current Gain IC= 5A ; VCE= 2V 40 240
Switching times
ton
Turn-on Time 1.0 μs
IC= 15A , IB1= -IB2= 1.5A
t
stg
Storage Time 2.0 μs
RL= 2Ω;PW=20μs
Duty Cycle≤2%
tf
Fall Time
1.0 μs
isc Website：www.iscsemi.cn
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