Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD845
DESCRIPTION ·
·With MT-200 package
·Complement to type 2SB755
·High transition frequency
·High breakdown voltage :V
APPLICATIONS
·For power amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
=150V(min)
CEO
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 12 A
IB Base current 1.2 A
PC Collector power dissipation
Collector-base voltage Open emitter 150 V
Collector-emitter voltage Open base 150 V
Emitter-base voltage Open collector 5 V
T
=25℃
C
120 W
Tj Junction temperature 150
T
Storage temperature -55~150
stg
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD845
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)EBO
V
CEsat
VBE Base-emitter on voltage IC=5A ; VCE=5V 1.5 V
I
CBO
I
EBO
hFE DC current gai n IC=1A ; VCE=5V 55 160
fT Transition frequency IC=1A ; VCE=10V 20 MHz
Collector-emitter breakdown voltage IC=0.1A; IB=0 150 V
Emitter-base breakdown voltage IE=10mA; IC=0 5 V
Collector-emitter saturation voltage IC=5 A;IB=0.5 A 2.0 V
Collector cut-off current VCB=150V; IE=0 -50
Emitter cut-off current VEB=5V; IC=0 -50
μA
μA
h
classifications
FE
R O
55-110 80-160
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD845
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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