Datasheet 2SD844 Specification

:

I

.

HIGH

POWER

CURRENT

AMPLIFIER

SWITCHING

FEATURES

•

High

Collector

•

Low Collector

: v

CE(sat)

•

High

Power

dissipation

.

Complementary

MAXIMUM

RATINGS

CHARACTERISTIC

Collector-Base

Voltage

Collector-Emitter

Emitter-Base

Collector

Emitter

Collector Power

Dissipation

Junction

Storage

Voltage

Current

Current

Temperature

Temperature

APPLICATIONS.

APPLICATION.

Current

Saturation

=0

-

4v

Max

(

to

2SB754.

(Ta=25

°C)

Voltage

Ta=25°C
Tc=25°C

Range

: I

C

Voltage

-)

:

P

C

=7A

(at I

C

=60W

(at Tc=25°C)

SYMBOL

VCBO

VCEO
VEBO

ic

X

p

Tj 150

Tstg

=4A)

E

c

SILICON

RATING UNIT

50

50

5

7

-7

2.5

60

-55M.50

V
V

V

A

A

W

°C
°c

NPN

1. BASE

S EMITTER

TOSHIBA

TRIPLE DIFFUSED

Unit in

I5.9MAX

COLLECTOR

2.

-

Z

0Z.2±O.2

(HEAT SINK)

16 B

1 A

TYPE

mm

ELECTRICAL

CHARACTERISTICS

CHARACTERISTIC

Collector

Emitter

Collector-

Breakdown

Cut-off Current

Cut-off

Emitter

Voltage

Emitter-Base

Breakdown Voltage

DC Current

Collector-

Saturation

Base-Emitter

Transition

Collector

Note

Gain

Emitter

Voltage

Voltage

Frequency

Output Capacitance

:

hpE(i)

Current

Classification

(Ta=25°C)

SYMBOL

v

(BR)CE0

V

(BR)EB0

h

("Note)

h

v

CE(sat)

vbe

f

Cob

: 70^140, Y

I

CBO

lEBO

FE(l)

FE(2)

T

TEST

CONDITION

V

B=50V,

C

VEB=5V,

I

IC=50mA,

I

=10mA, I

E

V

C

V

C

E=1V,

E=1V,

I

I

IC=4A, Ib=0.4A

VCE=1V, Ic=4A

V

C

VcB=10V

I

E=5V,

,

: 120^240

TOSHIBA CORPORATION iiiiiihiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiHliiimiiiiiiiiiiiilliiiiiiiiimiiiNimiiiiN

-750-

=0

I

E

=0

C

Ib=0

=0

c

=1A 70

C

=4A

C

=1A

C

f

=0 ,

=lMHz

E

MIN. TYP. MAX UNIT

-

-

10

- -

50

5

30

-

0.2

-

0.9 1.2

-

-

250

- -

- -

-

- -

15

VA

10

MA

240

0.4 V

-

MHz

-

pF

V

V

V

.

-

^

2SD844

"

6

S

S

?

1

80

9"

1

W

Fh

25

M

<!

PM

M
w

20

M

Pi

n

STATIC

•300

BASE CURRENT

V

CHARACTERISTICS

1

tf

Eh ._x

o

&q

>hh

L

t.

V

*\S

200 100

(mA)

I

B

Hi

C

^l^*.—~

o
o

1

/ h

L

'A

0.4 0.8 1.2

BASE- EMITTER V0 LTAQE

Pc

CD

®

®
®

25 50

AMBIENT TEMPERATURE

10

o

m

. 4

1

6

0.4

-

0.8

=

Tc

2 4 6

H

t,

2

?
h

(D

'BE

/

J

1

/

-

Ta

=

Ta

Tc

INFINITE

300 X300X

HEAT

SINK

100X100 X

HEAT SINK

(2>. MO HRAT RTNK

6^

75

EMITTER

25t

COLLECTOR

^,

>

EMITTER

VOLTAGE

s"^

§

3

Eh

t>

>

C

0MM0N

V

E~

C

1.6 2.0

HEAT

2 mm

mm

2

100

100

-

Ig

10mA

V

CE

EMITTER

V

X

1

i

(V)

V

BE

SINK

A£

A^

125

Ta

(°C)

90

80
70

B8
40

30
20

o|

(V)

150

hpE

=

100

Tc

—

25

1

—55

-C

«
w

Eh Eh

Eh

M

a

tf

O

EH

P D

O

o ra

o

0.03

-

-

0.5

0.3

0.1

0.05

0.02

COMMON

-

I

C

/I

B

'

Cj
«!

J
O
>

o
M

Eh

<

'

"

_

"

C0LLECT0R CURRENT

30

a"

Z

0.03

COLLECTOR CURRENT

MAX. (PULSED}*

i'C

I

MAxJ

c

r

5

'C

-I

=

'

!--

COMMON EMITTER

V

C E

-iv

1 IL,

i u

0.1 0.3

0.5

COLLECTOR CURRENT

v

CE(sat)

-

If

EMITTER

-10

III

. -\n0°^ ^

—

-DO

-

fT

If

ilMON EMITTER

=5V

v

:

c

E

i

ii_i Ul_U

0.1 0.3

0.5

SAFE OPERATING

I

UN

^

xSi

^JBVP

"*

\vST

1

1

-—

1

1 3

I

AREA

(S>,

\

\*

1 1

5

3

I

(A)

C

3 5

10

(A)

"^

N

S-

"

S

(A)

C

,/AV

$-

SINGLE

NONREPETITIVE

-

PULSE Tc=25°C

-

CURVES

MUST BE

DERATED LINEARLY WITH

INCREASE IN

I 1 1 1L. _j 1

3 5

0.3

0.5

"

'

COLLECTOR-

i

10

FMITTER

A\

<i>

VOLTAGE

L

^

\

\

k

\

\

'

1

V

V

,\

V

N

o

\

J

50

30

V

,

(VJ

P

-751

TOSHIBA

CORPORATION