Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD841
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·High speed switching
·High voltage:V
=800V(Min)
CBO
APPLICATIONS
·High voltage switching applications
PINNING
PIN DESCRIPTION
1
2 Collector
3 Emitter
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 800 V
CBO
V
Collector-emitter voltage Open base 400 V
CEO
V
Emitter-base voltage Open collector 5 V
EBO
IC Collector current 3 A
IB Base current 1.5 A
PC Collector power dissipation
TC=25℃
=25℃
T
a
40
W
2
Tj
T
stg
Junction temperature 150
Storage temperature -55~150
℃
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD841
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
Collector-emitter breakdown voltage IC=10mA , IB=0 400 V
(BR)CEO
V
Collector-emitter saturation voltage IC=0.5A; IB=50mA 1.0 V
CEsat
V
Base-emitter saturation voltage IC=0.5A; IB=50mA 1.5 V
BEsat
I
Collector cut-off current VCB=800V; IE=0 1 mA
CBO
I
Emitter cut-off current VEB=5V; IC=0 1 mA
EBO
h
DC current gain IC=10mA ; VCE=5V 8
FE-1
h
DC current gain IC=0.5A ; VCE=5V 10
FE-2
fT Transition frequency IE=-0.1A ; VCE=10V 4 MHz
COB Output capacitance IE=0 ; VCB=10V;f=1MHz 75 pF
=0.5A; IB1=-IB2=50mA
I
tf Fall time
C
=200V; RL=400Ω
V
CC
1.0
μs
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD841
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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