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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Darlington Power Transistor 2SD837
DESCRIPTION
·High DC Current Gain : h
·High Switching Speed
APPLICATIONS
·Audio power amplifiers
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(T
= 1000(Min.)@IC= 3A
FE
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
C
T
J
stg
Collector-Base Voltage 60 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 4 A
Base Current-Peak 8 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
40 W
isc Website：www.iscsemi.cn
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INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Darlington Power Transistor 2SD837
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CE(
V
CE(
V
BE(on)
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
sat
sat
Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 60 V
Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA B 2 V
)-1
Collector-Emitter Saturation Voltage IC= 5A; IB= 20mA B 4 V
)-2
Base-Emitter On Voltage IC= 3A ; VCE= 3V 2.5 V
Collector Cutoff Current VCB= 60V; IE= 0 0.2 mA
Collector Cutoff Current VCE= 30V; IB= 0 B 0.5 mA
Emitter Cutoff Current VEB= 5V; IC=0 2 μA
DC Current Gain IC= 0.5A ; VCE= 3V 1000
DC Current Gain IC= 3A ; VCE= 3V 1000 10000
Switching Times
t
on
t
off
Turn-On Time 0.3 μs
I
= 3A; IB1= -IB2= 12mA
C
Turn-Off T ime
4 μs
isc Website：www.iscsemi.cn
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