Datasheet 2sd834 Datasheet

Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD834
DESCRIPTION
·High DC current gain
·DARLINGTON
·Low collector saturation voltage
·Excellent safe operating area
APPLICATIONS
·Electronic ignitor
·Relay and solenoid drivers
·Switching regulators
·Motor controls
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
CEO(SUS)
V
EBO
IC Collector current-continuous 4 A
IB Base current 0.3 A
PC Collector power dissipation TC=25℃ 25 W
Collector-base voltage Open emitter 250 V
Collector-emitter voltage 200
Open base
Collector-emitter voltage
Emitter-base voltage Open collector 10 V
180
V
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
THERMAL CHARACTERISTICS
SYMBOL CHARACTERISTICS MAX UNIT
Rθjc Thermal resistance junction to case 5.0 ℃/W
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD834
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
Switching times
ton Turn-on time 1.7
Collector-emitter sustaining voltage IC=1A ; IB=0 180 V
Collector-emitter breakdown voltage IC=10mA ; IB=0 200 V
Collector-base breakdown voltage IC=0.1mA ; IE=0 250 V
Emitter-base breakdown voltage IE=10mA ; IC=0 10 V
Collector-emitter saturation voltage IC=2A;IB=2mA 1.5 V
Base-emitter saturation voltage IC=2A;IB=2mA 2.0 V
Collector cut-off current VCB=250V; IE=0 0.1 mA
Emitter cut-off current VEB=10V; IC=0 10 mA
DC current gain IC=2A ; VCE=2V 1500
μs
=2A;IB1=-IB2=5mA; RL=10Ω
I
ts Storage time 15.0
tf Fall time
C
PW=20μs;Duty≤2%
18.0
μs
μs
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD834
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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