Page 1
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Darlington Power Transistor 2SD833
DESCRIPTION
·High DC Current Gain : h
= 4000(Min) @IC= 3A
FE
·Low Collector Saturation Voltage : V
CE(sat)
APPLICATIONS
·Audio power amplifiers
·Relay& solenoid drivers
·Motor controls
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(T
= 1.5V(Max.) @ IC= 3A
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
CBO
V
CEO(SUS)
V
CEO
V
EBO
I
I
P
T
T
C
B
C
J
stg
Collector-Base Voltage 60 V
Collector-Emitter Voltage 50 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 7 A
B Base Current-Continuous 0.2 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
40 W
THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT
R
th j-c
Thermal Resistance, Junction to Case 3.0 ℃/W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Darlington Power Transistor 2SD833
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
V
CE(
BE(
I
CBO
I
EBO
h
FE
Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 50 V
Collector-Emitter Breakdown Voltage IC= 0.1mA; IB= 0 B 60 V
Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 60 V
Emitter-Base Breakdown Voltage IE= 3mA; IC= 0 5 V
Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA B 1.5 V
)
sat
Base-Emitter Saturation Voltage IC= 3A; IB= 6mA B 2.5 V
)
sat
Collector Cutoff Current VCB= 60V; IE=0 0.1 mA
Emitter Cutoff Current VEB= 5V; IC=0 3.0 mA
DC Current Gain IC= 3A; VCE= 3V 4000
isc Website：www.iscsemi.cn
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