Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD823
DESCRIPTION
·Collector Current: IC= 6A
·Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
APPLICATIONS
·Designed for B/W TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(T
= 90V(Min.)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
T
stg
Collector-Base Voltage 200 V
Collector-Emitter Voltage 90 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 6 A
Collector Current-Peak 10 A
Total Power Dissipation
C
J
=25℃
@ T
C
Junction Temperature 150
Storage Temperature Range -55~150
40 W
℃
℃
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD823
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
V
BE
I
CBO
I
EBO
h
(sat)
(sat)
FE
f
T
Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 B 90 V
Collector-Base Breakdown Voltage IC= 5mA; IE= 0 200 V
Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 7 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.5 V
Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.5 V
Collector Cutoff Current VCB= 40V; IE= 0 0.1 mA
Emitter Cutoff Current VEB= 4V; IC= 0 0.1 mA
DC Current Gain IC= 3A; VCE= 5V 20
Current-Gain—Bandwidth Product IC= 1A; VCE= 5V 15 MHz
t
f
isc Website：www.iscsemi.cn
Fall Time IC= 5A; IB1= 0.6A 1.0 μs
2
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