Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD818
DESCRIPTION
·High Collector-Base Breakdown Voltage : V
·Low Collector Saturation Voltage-
·High Switching Speed
APPLICATIONS
·Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(T
= 1500V (Min.)
(BR)CBO
=25℃)
a
SYMBOL PARAMETER MAX UNIT
V
V
V
T
CBO
CEO
EBO
I
C
I
E
P
C
T
stg
Collector-Base Voltage 1500 V
Collector-Emitter Voltage 600 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 2.5 A
Emitter Current-Continuous -2.5 A
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150 ℃
j
Storage Temperature Range -65~150 ℃
50 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD818
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE
C
OB
f
T
t
f
Collector-Emitter Saturation Voltage IC= 2A; IB= 0.6A B 8.0 V
Base-Emitter Saturation Voltage IC= 2A; IB= 0.6A B 1.5 V
Collector Cutoff Current VCB= 500V; IE= 0 10
Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA
DC Current Gain IC= 0.5A; VCE= 5V 8
Output Capacitance
Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V 3 MHz
Fall Time
= 0; VCB= 10V; f
I
E
I
= 2A; I
CP
B1(
end)
= 1.0MHz
test
= 0.6A
95 pF
1.0 μs
μA
isc Website：www.iscsemi.cn
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