Page 1
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD817
DESCRIPTION ·
·With TO-3 package
·High voltage ,high reliability
·Wide area of safe operation
APPLICATIONS
·High voltage power switching TV horizontal
deflection output applications
PINNING(see fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 1.5 A
PC Collector power dissipation
Tj Junction temperature 150
Collector-base voltage Open emitter 1500 V
Collector-emitter voltage Open base 600 V
Emitter-base voltage Open collector 6 V
T
=25℃
C
50 W
℃
T
Storage temperature -55~150
stg
℃
Page 2
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD817
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)EBO
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
Emitter-base breakdown voltage IE=1mA; IC=0 6 V
Collector-emitter breakdown voltage IC=10mA; IB=0 600 V
Collector-emitter saturation voltage IC=1.2A; IB=0.3A 5.0 V
Base-emitter saturation voltage IC=1.2A; IB=0.3A 1.5 V
Collector cut-off current VCB=800V;IE=0 10
Emitter cut-off current VEB=6V; IC=0 10
DC current gain IC=0.3A ; VCE=5V 10 30
μA
μA
2
Page 3
固电半导体
INCHANGE SEMICONDUTOR
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD817
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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