Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD812
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V
(BR)CEO
·Good Linearity of h
·Wide Area of Safe Operation
·Complement to Type 2SB747
APPLICATIONS
·High power amplifier applications.
·Suitable for 15~20W home stereo output amplifier and
voltage regulator.
ABSOLUTE MAXIMUM RATINGS(T
= 80V(Min)
FE
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
T
CBO
CEO
EBO
I
C
CM
C
T
J
stg
Collector-Base Voltage 80 V
Collector-Emitter Voltage 80 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 5 A
Collector Current-Peak 8 A
Collector Power Dissipation
=25℃
@ T
C
Junction Temperature 150 ℃
Storage Temperature Range -55~150 ℃
40 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD812
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
h
h
h
CE
(sat)
BE(on)
I
CBO
I
EBO
FE-1
FE-2
FE-3
C
OB
f
T
Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 2.0 V
Base-Emitter On Voltage IC= 3A; VCE= 5V 1.8 V
Collector Cutoff Current VCB= 80V; IE= 0 50 μA
Emitter Cutoff Current VEB= 3V; IC= 0 50 μA
DC Current Gain IC= 20mA; VCE= 5V 20
DC Current Gain IC= 1A; VCE= 5V 40 200
DC Current Gain IC= 3A; VCE= 5V 20
Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz 90 pF
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V 15 MHz
h
Classifications
FE-2
R Q P
40-80 60-120 100-200
isc Website：www.iscsemi.cn
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