Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD797
DESCRIPTION
·With TO-3 package
·High current capability
·High power dissipation
APPLICATIONS
·High power amplifier applications
·High power switching applications
·DC-DC converter applications
·Regulator applications
PINNING(see Fig.2)
PIN DESCRIPTION
1
2 Emitter
3 Collector
Base
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
I
C
I
B Base current 8 A
B
P
C
Collector-base voltage Open emitter 100 V
Collector-emitter voltage Open base 80 V
Emitter-base voltage Open collector 7 V
Collector current 30 A
Collector power dissipation TC=25℃ 200 W
℃)
T
j
T
stg
Junction temperature 175 ℃
Storage temperature -65~175 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD797
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
Collector-emitter breakdown voltage IC=50mA ;IB=0 80 V
Collector-emitter saturation voltage IC=15A; IB=3A 1.5 V
Base-emitter saturation voltage IC=15A; IB=3A 2.5 V
Collector cut-off current VCB=100V; IE=0 0.1 mA
Emitter cut-off current VEB=7V; IC=0 0.1 mA
DC current gain IC=1A ; VCE=5V 60 200
DC current gain IC=15A ; VCE=5V 10
Output capacitance IE=0 ; VCB=10V;f=1.0MHz 400 pF
Transition frequency IC=1A ; VCE=5V 1.5 MHz
Switching times
t
on
Turn-on time 2.5
μs
=10Ω;IB1=-IB2=0.5A;
R
t
stg
t
f
Storage time 6.0
Fall time
V
L
CC
=50V
1.5
μs
μs
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD797
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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