Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD795
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V
·Low Collector-Emitter Saturation Voltage-
: V
APPLICATIONS
·Designed for audio frequency power amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(T
= 40V(Min)
(BR)CEO
= 0.7V(Max) @IC= 2.0A
CE(sat)
=25℃)
a
SYMBOL PARAMETER VALUE UNIT
V
V
V
I
P
CBO
CEO
EBO
I
C
CM
I
B
C
T
J
Collector-Base Voltage 50 V
Collector-Emitter Voltage 40 V
Emitter-Base Voltage 5 V
Collector Current-Continuous 3.0 A
Collector Current-Peak 6.0 A
B Base Current-Continuous 0.6 A
Collector Power Dissipation
=25℃
@ T
a
Collector Power Dissipation
@ TC=25℃
Junction Temperature 150
1.5
W
20
℃
T
stg
Storage Temperature Range -55~150
isc Website：www.iscsemi.cn
℃
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD795
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CE
V
BE(on)
I
I
h
h
C
h
Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 0.7 V
Base-Emitter On Voltage IC= 0.5A; VCE= 1V 0.9 V
Collector Cutoff Current VCB= 50V; IE= 0 1.0 μA
Emitter Cutoff Current VEB= 3V; IC= 0 1.0 μA
DC Current Gain IC= 0.5A; VCE= 1V 60 400
DC Current Gain IC= 2.5A; VCE= 1V 30
Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz 40 pF
Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V 95 MHz
Classifications
CBO
EBO
FE-1
FE-2
OB
f
T
(sat)
FE-1
R Q P E
60-120 100-200 160-320 200-400
isc Website：www.iscsemi.cn
2
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