Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD762 2SD762A
DESCRIPTION ·
·With TO-220C package
·Wide area of safe operation
APPLICATIONS
·For audio freuqency power
amplifier applications
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Absolute maximum ratings(Tc=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
V
V
I
CBO
CEO
EBO
I
C
CM
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage Open collector 8 V
Collector current 4 A
Collector current-peak
℃)
2SD762 60
Open emitter
2SD762A
2SD762 60
Open base
2SD762A
80
80
6 A
V
V
I
B Base current 1 A
B
P
C
T
j
T
stg
Collector power dissipation TC=25℃ 30 W
Junction temperature 150 ℃
Storage temperature -55~150 ℃
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD762 2SD762A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
CEsat
V
I
CBO
I
EBO
h
FE-1
h
FE-2
BE
Collector-emitter
sustaining voltage
Collector-emitter saturation voltage IC=2 A;IB=0.4 A B 1.0 V
Base-emitter on voltage IC=1A ; VCE=3V 1.2 V
Collector cut-off current VCB=50V; IE=0 30 μA
Emitter cut-off current VEB=8V; IC=0 1 mA
DC current gain IC=0.1A ; VCE=3V 40
DC current gain IC=1A ; VCE=3V 30 160
h
classifications
FE-2
Q P O
30-60 50-100 80-160
2SD762 60
2SD762A
=0.2A; L=25mH
I
C
80
V
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SD762 2SD762A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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