Page 1
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD750
DESCRIPTION
·Collector-Emitter Breakdown Voltage : V
(BR)CEO
·Wide Area of Safe Operation
·High Current Capability
APPLICATIONS
·Designed for AF high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
= 80V (Min)
=25℃)
a
SYMBOL PARAMETER MAX UNIT
V
V
V
I
T
CBO
CEO
EBO
I
C
CM
P
C
T
stg
Collector-Base Voltage 110 V
Collector-Emitter Voltage 80 V
Emitter-Base Voltage 7 V
Collector Current-Continuous 15 A
Collector Current-Peak 30 A
Collector Power Dissipation
=25℃
@T
C
Junction Temperature 150 ℃
j
Storage Temperature Range -65~150 ℃
100 W
isc Website：www.iscsemi.cn
Page 2
INCHANGE Semiconductor isc Product Specification
www.iscsemi.cn
isc Silicon NPN Power Transistor 2SD750
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
V
h
(BR)CEO
(BR)EBO
CE
(sat)
BE
(on)
I
CBO
h
FE-1
h
FE-2
f
T
FE-2
Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 80 V
Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 7 V
Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2.0 V
Base-Emitter On Voltage IC= 5A; VCE= 4V 1.5 V
Collector Cutoff Current VCB= 40V; IE= 0 30
DC Current Gain IC= 1A; VCE= 4V 40
DC Current Gain IC= 5A; VCE= 4V 30 120
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 1 MHz
Classifications
μA
Q P O
30-60 40-80 60-120
isc Website：www.iscsemi.cn
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